⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ethane SCHEMBL28306788 | 1.00 | — | — | |
| Ethane SCHEMBL8961064 | 1.00 | — | — | |
| Ethane SCHEMBL55155 | 1.00 | — | — | |
| Ethane SCHEMBL27869411 | 0.87 | — | — | |
| Ethane SCHEMBL21523569 | 0.87 | — | — | |
| Ethane SCHEMBL8580352 | 0.87 | — | — | |
| Ethane SCHEMBL6509257 | 0.87 | — | — | |
| Ethane SCHEMBL12504448 | 0.87 | — | — | |
| Ethane SCHEMBL28206489 | 0.87 | — | — | |
| Ethane SCHEMBL45 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 239 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119774602-A | Silicon-carbon composite material for catalyzing graphitization, preparation method of silicon-carbon composite material and lithium ion battery | 深圳索理德新材料科技有限公司 | 2025-04-08 | — | — | CN | claimed |
| CN-119019175-A | Porous silicon carbide material and preparation method thereof | 甬江实验室 | 2024-11-26 | — | — | CN | claimed |
| CN-117917384-B | Janus nanoparticle type air entraining agent with low surface charge density, preparation method and application thereof | 博特新材料泰州有限公司 | 2024-10-29 | — | — | CN | claimed |
| CN-117917384-A | Jauns nanoparticle type air entraining agent with low surface charge density, preparation method and application thereof | 博特新材料泰州有限公司 | 2024-04-23 | — | — | CN | claimed |
| CN-116387487-A | Porous silicon-carbon composite anode material and preparation method thereof | 山东海科创新研究院有限公司 | 2023-07-04 | — | — | CN | claimed |
| CN-110357915-B | System for synthesizing, filtering and purifying silicon ethane | 台湾特品化学股份有限公司 | 2023-02-03 | — | — | CN | claimed |
| CN-110395736-B | System for catalyst promotes silane reaction and generates and technology accessory substance is retrieved entirely | 台湾特品化学股份有限公司 | 2023-02-03 | — | — | CN | claimed |
| CN-110357109-B | System for synthesizing, filtering and purifying silicon propane | 台湾特品化学股份有限公司 | 2022-12-30 | — | — | CN | claimed |
| CN-115498102-A | Preparation method of graphene-based quantum resistor chip | 中国科学院上海微系统与信息技术研究所 | 2022-12-20 | — | — | CN | claimed |
| CN-114525493-A | Metamaterial infrared emission structure and preparation method | 苏州科技大学 | 2022-05-24 | — | — | CN | claimed |
| CN-101927154-A | Preparation method of three-functional-group n-octadecyl bonded phase | JIAZHONG NOVEL MATERIAL CORP | 2010-12-29 | — | — | CN | claimed |
| CN-101170060-B | Method for manufacturing silicon germanium epitaxial layer | UMC CORP | 2010-11-17 | — | — | CN | claimed |
| CN-101236927-B | Self-aligned contact and method for fabricating the same | POWERCHIP SEMICONDUCTOR CORP | 2010-10-20 | — | — | CN | claimed |
| CN-100481398-C | Method for manufacturing memory and method for manufacturing semiconductor element | POWERCHIP SEMICONDUCTOR CORP R (CN) | 2009-04-22 | — | — | CN | claimed |
| CN-101345207-A | Non-volatile memory, source/drain line plug and method of manufacturing the same | POWERCHIP SEMICONDUCTOR CORP (CN) | 2009-01-14 | — | — | CN | claimed |
| CN-101236927-A | Self-aligned contact and method for fabricating the same | POWERCHIP SEMICONDUCTOR CORP (CN) | 2008-08-06 | — | — | CN | claimed |
| CN-101207029-A | Method for manufacturing floating grid and method for manufacturing memory | POWERCHIP SEMICONDUCTOR CORP (CN) | 2008-06-25 | — | — | CN | claimed |
| CN-101174591-A | Method for manufacturing memory and method for manufacturing semiconductor element | LIJING SEMICONDUCTOR CO LTD (CN) | 2008-05-07 | — | — | CN | claimed |
| CN-101170060-A | Method for manufacturing silicon germanium epitaxial layer | UMC CORP (CN) | 2008-04-30 | — | — | CN | claimed |
| CN-101005048-A | Memory structure, memory device and manufacturing method thereof | UMC CORP (CN) | 2007-07-25 | — | — | CN | claimed |