⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23451840 | 0.87 | — | — | |
| SCHEMBL23451932 | 0.87 | — | — | |
| SCHEMBL10792050 | 0.67 | — | — | |
| SCHEMBL29449400 | 0.58 | — | — | |
| SCHEMBL2701509 | 0.58 | — | — | |
| Xenon Xe 127 SCHEMBL29435140 | 0.58 | — | — | |
| SCHEMBL1394588 | 0.58 | — | — | |
| SCHEMBL10357006 | 0.58 | — | — | |
| Charcoal, Activated SCHEMBL2824176 | 0.58 | — | — | |
| SCHEMBL29360521 | 0.58 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 99 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170117142-A1 | Organic Germanium Amine Compound and Method for Depositing Thin Film Using the Same | EUGENE TECHNOLOGY MATERIALS CO., LTD. (KR) | 2017-04-27 | — | — | US | claimed |
| CN-102687243-B | Be used for the synthetic and use of the precursor of the film ALD that contains VA family element | ASM INTERNATIONAL N.V. (NL) | 2016-05-11 | — | — | CN | claimed |
| CN-104518157-A | Encapsulation structure and encapsulation method of organic light emitting diode device | OCEANS KING LIGHTING SCIENCE | 2015-04-15 | — | — | CN | claimed |
| CN-104518161-A | Encapsulation structure and encapsulation method of organic light emitting diode device | OCEANS KING LIGHTING SCIENCE | 2015-04-15 | — | — | CN | claimed |
| CN-104518119-A | Organic light-emitting device packaging structure and packaging method thereof | OCEANS KING LIGHTING SCIENCE | 2015-04-15 | — | — | CN | claimed |
| CN-103132050-A | Tellurium (te) precursors for making phase change memory materials | AIR PROD & CHEM | 2013-06-05 | — | — | CN | claimed |
| CN-101367756-B | Tellurium precursors for fabricating phase change memory materials | AIR PROD & CHEM | 2013-02-06 | — | — | CN | claimed |
| CN-102687243-A | Synthesis and use of precursors for ALD of Group VA element containing thin films | ASM INT | 2012-09-19 | — | — | CN | claimed |
| CN-101497999-B | Antimony precursors for GST films in ALD/CVD processes | AIR PROD & CHEM | 2012-08-08 | — | — | CN | claimed |
| CN-101497999-A | Antimony precursors for GST films in ALD/CVD processes | AIR PROD & CHEM (US) | 2009-08-05 | — | — | CN | claimed |
| CN-101367756-A | Tellurium precursors for fabricating phase change memory materials | AIR PROD & CHEM (US) | 2009-02-18 | — | — | CN | claimed |
| EP-1464725-B1 | Germanium compounds suitable for use in vapor deposition processes | ROHM & HAAS ELECT MAT (US) | 2008-12-17 | — | — | EP | claimed |
| EP-0678913-A1 | Multilevel metallization forming method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1995-10-25 | — | — | EP | claimed |
| US-5312776-A | Forming metallic film on substrate, dry etching with chlorine containing gas, supplying surface active agent to form hydrophobic molecular layers on walls of wirings | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1994-05-17 | — | — | US | claimed |
| CN-122029171-A | Small molecule inhibitors of KRAS proteins | 默沙东有限责任公司 | 2026-05-12 | — | — | CN | disclosed |
| US-20260114191-A1 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS | TOKYO ELECTRON LTD (JP) | 2026-04-23 | — | — | US | disclosed |
| US-20260110080-A1 | METHOD OF DEPOSITING FILM | TOKYO ELECTRON LTD (JP) | 2026-04-23 | — | — | US | disclosed |
| EP-0678913-A1 | Multilevel metallization forming method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1995-10-25 | — | — | EP | disclosed |
| CN-1109216-A | Semiconductor device and method for manufacturing the same | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 1995-09-27 | — | — | CN | disclosed |
| US-5312776-A | Forming metallic film on substrate, dry etching with chlorine containing gas, supplying surface active agent to form hydrophobic molecular layers on walls of wirings | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1994-05-17 | — | — | US | disclosed |