⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL962562 | 1.00 | — | — | |
| Phosphine SCHEMBL379957 | 0.87 | — | — | |
| SCHEMBL6131460 | 0.87 | — | — | |
| SCHEMBL9404735 | 0.87 | — | — | |
| SCHEMBL61699 | 0.87 | — | — | |
| SCHEMBL591326 | 0.87 | — | — | |
| SCHEMBL141586 | 0.87 | — | — | |
| SCHEMBL7263528 | 0.87 | — | — | |
| SCHEMBL4197426 | 0.87 | — | — | |
| SCHEMBL10531769 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 36042 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260150439-A1 | DUAL-BAND LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF | TAIWAN-ASIA SEMICONDUCTOR CORPORATION (TW) | 2026-05-28 | — | — | US | claimed |
| CN-119758521-B | Novel continuous constraint state-based etching-free optical waveguide and dispersion regulation and control method | JILIN UNIVERSITY (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122095529-A | Beam-steering laser device and method of manufacturing the same | — | 2026-05-26 | — | — | CN | claimed |
| CN-114424417-B | Method, system and apparatus for higher order mode suppression | NLIGHT, INC. (US) | 2026-05-26 | — | — | CN | claimed |
| CN-122073908-A | Dual-band light emitting diode and method of manufacturing the same | 台亚半导体股份有限公司 | 2026-05-22 | — | — | CN | claimed |
| CN-122068362-A | Tunnel junction type vertical cavity surface emitting laser structure and forming method thereof | 上海新微半导体有限公司 | 2026-05-19 | — | — | CN | claimed |
| CN-122042718-A | Semiconductor material detection method and growth equipment calibration method | 度亘核芯光电技术(苏州)股份有限公司 | 2026-05-15 | — | — | CN | claimed |
| WO-2026101991-A1 | INTEGRATION OF COMPOUND SEMICONDUCTOR THIN FILM STRUCTURES ON LARGE-DIAMETER SUBSTRATES WITH WAFER BONDING AND SUBSTRATE REMOVAL | Aeluma, Inc. (US) | 2026-05-15 | — | — | WO | claimed |
| US-20260136714-A1 | FLIP-CHIP LIGHT-EMITTING DIODE | TAIWAN ASIA SEMICONDUCTOR CORP (TW) | 2026-05-14 | — | — | US | claimed |
| EP-4742864-A1 | FLIP CHIP LIGHT EMITTING DIODE | Taiwan-Asia Semiconductor Corporation (TW) | 2026-05-13 | — | — | EP | claimed |
| US-3967987-A | Epitazy of heterojunction devices | GLOBE-UNION INC. (US) | 1976-07-06 | — | — | US | claimed |
| US-3966513-A | Method of growing by epitaxy from the vapor phase a material on substrate of a material which is not stable in air | U.S. PHILIPS CORPORATION (US) | 1976-06-29 | — | — | US | claimed |
| US-3961996-A | PROCESS OF PRODUCING SEMICONDUCTOR LASER DEVICE | MITSUBISHI DENKI KABUSHIKI KAISHA (JA) | 1976-06-08 | — | — | US | claimed |
| US-3960618-A | Epitaxial growth process for compound semiconductor crystals in liquid phase | HITACHI, LTD. (JA) | 1976-06-01 | — | — | US | claimed |
| US-3959037-A | Electron emitter and method of fabrication | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 1976-05-25 | — | — | US | claimed |
| US-3959038-A | Electron emitter and method of fabrication | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 1976-05-25 | — | — | US | claimed |
| US-3959522-A | Method for forming an ohmic contact | RCA CORPORATION (US) | 1976-05-25 | — | — | US | claimed |
| US-3955082-A | Photodiode detector with selective frequency response | NORTHERN ELECTRIC COMPANY LIMITED (CA) | 1976-05-04 | — | — | US | claimed |
| US-3951698-A | Dual use of epitaxy seed crystal as tube input window and cathode structure base | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 1976-04-20 | — | — | US | claimed |
| US-3946416-A | Low impedance diode mounting structure and housing | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 1976-03-23 | — | — | US | claimed |