⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18774603 | 0.92 | — | — | |
| SCHEMBL83425 | 0.92 | — | — | |
| SCHEMBL15944142 | 0.73 | — | — | |
| SCHEMBL3515767 | 0.72 | — | — | |
| SCHEMBL17814 | 0.71 | — | — | |
| SCHEMBL277607 | 0.71 | — | — | |
| SCHEMBL729092 | 0.71 | — | — | |
| SCHEMBL626515 | 0.67 | — | — | |
| Ammonia Solution, Strong SCHEMBL8566348 | 0.67 | — | — | |
| Water SCHEMBL2333523 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 347 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250166990-A1 | METHOD FOR FORMING INSULATING FILM, AND SUBSTRATE PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2025-05-22 | — | — | US | claimed |
| US-12241155-B2 | Method for forming insulation film | TOKYO ELECTRON LIMITED (JP) | 2025-03-04 | — | — | US | claimed |
| US-20240321571-A1 | INSULATING FILM FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2024-09-26 | — | — | US | claimed |
| CN-117966484-A | Flame-retardant down feather finished based on boron-silicon flame retardant and preparation method thereof | 江苏康乃馨羽绒制品科技有限公司 | 2024-05-03 | — | — | CN | claimed |
| CN-117777732-A | Packaging material and preparation method and application thereof | 华为技术有限公司 | 2024-03-29 | — | — | CN | claimed |
| CN-117666229-A | Visible-infrared broadband regulation all-solid-state electrochromic device and preparation method and application thereof | 中国科学院上海硅酸盐研究所 | 2024-03-08 | — | — | CN | claimed |
| CN-117625144-A | Pre-cured heat-conducting silica gel and preparation method thereof | 韦尔通科技股份有限公司 | 2024-03-01 | — | — | CN | claimed |
| CN-117590660-A | High-transmittance glass-based electrochromic glasses and preparation method thereof | 中国科学院上海硅酸盐研究所 | 2024-02-23 | — | — | CN | claimed |
| CN-117590659-A | High-permeability resin-based electrochromic glasses and preparation method thereof | 中国科学院上海硅酸盐研究所 | 2024-02-23 | — | — | CN | claimed |
| CN-117449094-A | Flame-retardant down and preparation method thereof | 江苏康乃馨羽绒制品科技有限公司 | 2024-01-26 | — | — | CN | claimed |
| US-7943531-B2 | Methods for forming a silicon oxide layer over a substrate | APPLIED MATERIALS, INC. (US) | 2011-05-17 | — | — | US | claimed |
| EP-2208222-A1 | METHODS FOR FORMING A SILICON OXIDE LAYER OVER A SUBSTRATE | Applied Materials, Inc. (US) | 2010-07-21 | — | — | EP | claimed |
| CN-101528974-A | Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp II-remote plasma enhanced deposition processes | APPLIED MATERIALS INC (US) | 2009-09-09 | — | — | CN | claimed |
| EP-2082078-A2 | FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES | Applied Materials, INC. (US) | 2009-07-29 | — | — | EP | claimed |
| WO-2009055340-A1 | METHODS FOR FORMING A SILICON OXIDE LAYER OVER A SUBSTRATE | APPLIED MATERIALS, INC. (US) | 2009-04-30 | — | — | WO | claimed |
| US-20090104791-A1 | Methods for Forming a Silicon Oxide Layer Over a Substrate | APPLIED MATERIALS, INC. A DELAWARE CORPORATION (US) | 2009-04-23 | — | — | US | claimed |
| US-7498273-B2 | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes | APPLIED MATERIALS, INC. (US) | 2009-03-03 | — | — | US | claimed |
| WO-2008048862-A2 | FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES | APPLIED MATERIALS, INC. (US) | 2008-04-24 | — | — | WO | claimed |
| US-20070281495-A1 | FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES | APPLIED MATERIALS, INC. (US) | 2007-12-06 | — | — | US | claimed |
| EP-0565048-B1 | Method for the removal of siloxane dissolved in the solvent employed in the preparation of trimethoxysilane via methanol-silicon metal reaction | OSI SPECIALTIES INC (US) | 1996-12-27 | — | — | EP | claimed |