Phosphine

Phosphine

SCHEMBL345762

P.[Cu].[W]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phosphine SCHEMBL6852575 0.87
Phosphine SCHEMBL8891940 0.87
SCHEMBL27635790 0.82
Phosphine SCHEMBL30293816 0.82
Phosphine SCHEMBL27852307 0.82
SCHEMBL28091446 0.82
Phosphine SCHEMBL755303 0.82
SCHEMBL30721170 0.82
Phosphine SCHEMBL542123 0.82
SCHEMBL31277661 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1433572-A Novel chip interconnect and packaging deposition methods and structures NUTOOL INC (US) 2003-07-30 CN claimed
CN-103779269-A Method for processing copper surface of interconnected wire SEMICONDUCTOR MFG INT SHANGHAI 2014-05-07 CN disclosed
CN-101924063-B Integrated circuit system employing low-K dielectrics and method of manufacture thereof GLOBALFOUNDRIES SG PTE LTD 2013-10-30 CN disclosed
US-8298911-B2 Methods of forming wiring structures SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-10-30 US disclosed
US-8232653-B2 Wiring structures SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-07-31 US disclosed
US-20120012897-A1 Vertically Fabricated BEOL Non-Volatile Two-Terminal Cross-Trench Memory Array with Two-Terminal Memory Elements and Method of Fabricating the Same UNITY SEMICONDUCTOR CORPORATION (US) 2012-01-19 US disclosed
US-20110183516-A1 METHODS OF FORMING WIRING STRUCTURES SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-07-28 US disclosed
CN-101924063-A Use the integrated circuit (IC) system and the manufacture method thereof of low-K dielectric GLOBALFOUNDRIES SG PTE LTD 2010-12-22 CN disclosed
US-20100244255-A1 Wiring structures SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-09-30 US disclosed
CN-1238891-C Novel chip interconnect and packaging deposition methods and structures ASM NUTOOL INC (US) 2006-01-25 CN disclosed
CN-1433572-A Novel chip interconnect and packaging deposition methods and structures NUTOOL INC (US) 2003-07-30 CN disclosed