⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28312883 | 0.86 | — | — | |
| SCHEMBL28615021 | 0.84 | — | — | |
| SCHEMBL28242989 | 0.83 | TSHR (0.41) | — | |
| SCHEMBL28242984 | 0.80 | TSHR (0.47) | — | |
| SCHEMBL9326879 | 0.78 | — | — | |
| SCHEMBL6232945 | 0.75 | — | — | |
| SCHEMBL27034900 | 0.75 | TSHR (0.43) | — | |
| SCHEMBL6421247 | 0.72 | — | — | |
| SCHEMBL4902402 | 0.72 | — | — | |
| SCHEMBL15577163 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 67 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250226177-A1 | FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING | TOKYO ELECTRON LIMITED (JP) | 2025-07-10 | — | — | US | claimed |
| US-12288671-B2 | Film deposition apparatus for fine pattern forming | TOKYO ELECTRON LIMITED (JP) | 2025-04-29 | — | — | US | claimed |
| US-20240096595-A1 | FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING | TOKYO ELECTRON LIMITED (JP) | 2024-03-21 | — | — | US | claimed |
| US-11881379-B2 | Film deposition apparatus for fine pattern forming | TOKYO ELECTRON LIMITED (JP) | 2024-01-23 | — | — | US | claimed |
| US-20220328301-A1 | FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING | TOKYO ELECTRON LIMITED (JP) | 2022-10-13 | — | — | US | claimed |
| US-11404271-B2 | Film deposition apparatus for fine pattern forming | TOKYO ELECTRON LIMITED (JP) | 2022-08-02 | — | — | US | claimed |
| US-11404272-B2 | Film deposition apparatus for fine pattern forming | TOKYO ELECTRON LIMITED (JP) | 2022-08-02 | — | — | US | claimed |
| CN-114514469-A | Imprint method and patterned layer | 皇家飞利浦有限公司 | 2022-05-17 | — | — | CN | claimed |
| US-20190115204-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2019-04-18 | — | — | US | claimed |
| US-20190096658-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2019-03-28 | — | — | US | claimed |
| US-20190041756-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2019-02-07 | — | — | US | claimed |
| US-10191378-B2 | Mask pattern forming method, fine pattern forming method, and film deposition apparatus | TOKYO ELECTRON LIMITED (JP) | 2019-01-29 | — | — | US | claimed |
| CN-103088311-B | The formation method of crystal seed layer and the film build method of silicon-containing film | TOKYO ELECTRON LIMITED (JP) | 2016-05-11 | — | — | CN | claimed |
| CN-102347266-B | Trench-filling method and film-forming system | TOKYO ELECTRON LTD | 2014-11-12 | — | — | CN | claimed |
| CN-103928316-A | Method Of Forming Silicon Oxide Film | TOKYO ELECTRON LTD | 2014-07-16 | — | — | CN | claimed |
| CN-103094077-A | Method of forming silicon oxide film | TOKYO ELECTRON LTD | 2013-05-08 | — | — | CN | claimed |
| CN-102543830-A | Trench embedding method and film-forming apparatus | TOKYO ELECTRON LTD | 2012-07-04 | — | — | CN | claimed |
| CN-102543795-A | Film formation apparatus | TOKYO ELECTRON LTD | 2012-07-04 | — | — | CN | claimed |
| CN-102347266-A | Trench-filling method and film-forming system | TOKYO ELECTRON LTD | 2012-02-08 | — | — | CN | claimed |
| US-20250226177-A1 | FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING | TOKYO ELECTRON LIMITED (JP) | 2025-07-10 | — | — | US | disclosed |
| US-12288671-B2 | Film deposition apparatus for fine pattern forming | TOKYO ELECTRON LIMITED (JP) | 2025-04-29 | — | — | US | disclosed |
| WO-2024079585-A1 | TRANSISTOR AND STORAGE DEVICE | 株式会社半導体エネルギー研究所 | 2024-04-18 | — | — | WO | disclosed |
| US-20240096595-A1 | FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING | TOKYO ELECTRON LIMITED (JP) | 2024-03-21 | — | — | US | disclosed |
| US-20240047180-A1 | SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2024-02-08 | — | — | US | disclosed |
| US-11881379-B2 | Film deposition apparatus for fine pattern forming | TOKYO ELECTRON LIMITED (JP) | 2024-01-23 | — | — | US | disclosed |
| CN-115956284-A | Substrate processing apparatus, method for manufacturing semiconductor device, and program | 株式会社国际电气 | 2023-04-11 | — | — | CN | disclosed |
| CN-115917713-A | Substrate processing apparatus, method and program for manufacturing semiconductor device, auxiliary plate, and substrate holder | 株式会社国际电气 | 2023-04-04 | — | — | CN | disclosed |
| CN-115917712-A | Substrate processing apparatus, method for manufacturing semiconductor device, and plasma generating apparatus | 株式会社国际电气 | 2023-04-04 | — | — | CN | disclosed |
| CN-110890265-B | Substrate processing apparatus, electrode of substrate processing apparatus, and method for manufacturing semiconductor device | 株式会社国际电气 | 2022-12-23 | — | — | CN | disclosed |
| CN-110284120-B | Cleaning method and film forming apparatus | 东京毅力科创株式会社 | 2022-11-08 | — | — | CN | disclosed |
| US-20220328301-A1 | FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING | TOKYO ELECTRON LIMITED (JP) | 2022-10-13 | — | — | US | disclosed |
| CN-115116823-A | Semiconductor manufacturing method and semiconductor manufacturing apparatus | 铠侠股份有限公司 | 2022-09-27 | — | — | CN | disclosed |
| CN-217280688-U | Substrate processing apparatus and substrate holding part | 株式会社国际电气 | 2022-08-23 | — | — | CN | disclosed |
| US-11404271-B2 | Film deposition apparatus for fine pattern forming | TOKYO ELECTRON LIMITED (JP) | 2022-08-02 | — | — | US | disclosed |
| US-11404272-B2 | Film deposition apparatus for fine pattern forming | TOKYO ELECTRON LIMITED (JP) | 2022-08-02 | — | — | US | disclosed |
| CN-114514469-A | Imprint method and patterned layer | 皇家飞利浦有限公司 | 2022-05-17 | — | — | CN | disclosed |
| CN-108400092-B | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium | 株式会社国际电气 | 2022-02-22 | — | — | CN | disclosed |
| US-10879066-B2 | Mask pattern forming method, fine pattern forming method, and film deposition apparatus | TOKYO ELECTRON LIMITED (JP) | 2020-12-29 | — | — | US | disclosed |
| CN-111868896-A | Substrate processing apparatus, method of manufacturing semiconductor device, and program | 株式会社国际电气 | 2020-10-30 | — | — | CN | disclosed |
| CN-111837223-A | Substrate processing apparatus, method of manufacturing semiconductor device, and program | 株式会社国际电气 | 2020-10-27 | — | — | CN | disclosed |
| CN-111739779-A | Substrate processing apparatus, method of manufacturing semiconductor device, and storage medium | 株式会社国际电气 | 2020-10-02 | — | — | CN | disclosed |
| CN-111066122-A | Substrate processing apparatus, method for manufacturing semiconductor device, and program | 株式会社国际电气 | 2020-04-24 | — | — | CN | disclosed |
| US-10283405-B2 | Method and apparatus for forming silicon film and storage medium | TOKYO ELECTRON LIMITED (JP) | 2019-05-07 | — | — | US | disclosed |
| US-20190115204-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2019-04-18 | — | — | US | disclosed |
| US-20190096658-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2019-03-28 | — | — | US | disclosed |
| US-20190041756-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2019-02-07 | — | — | US | disclosed |
| US-10191378-B2 | Mask pattern forming method, fine pattern forming method, and film deposition apparatus | TOKYO ELECTRON LIMITED (JP) | 2019-01-29 | — | — | US | disclosed |
| US-10176992-B2 | Mask pattern forming method, fine pattern forming method, and film deposition apparatus | TOKYO ELECTRON LIMITED (JP) | 2019-01-08 | — | — | US | disclosed |
| US-10141187-B2 | Mask pattern forming method, fine pattern forming method, and film deposition apparatus | TOKYO ELECTRON LIMITED (JP) | 2018-11-27 | — | — | US | disclosed |
| CN-107871652-A | The manufacture method and lining processor of semiconductor devices | 株式会社日立国际电气 | 2018-04-03 | — | — | CN | disclosed |
| US-20180019113-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2018-01-18 | — | — | US | disclosed |
| US-20170287778-A1 | METHOD AND APPARATUS FOR FORMING SILICON FILM AND STORAGE MEDIUM | TOKYO ELECTRON LIMITED (JP) | 2017-10-05 | — | — | US | disclosed |
| US-20170162381-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2017-06-08 | — | — | US | disclosed |
| CN-105609406-A | Semiconductor device manufacturing method, substrate processing apparatus, gas supply system, three-dimensional flash memory, dynamic random access memory and semiconductor device | HITACHI INT ELECTRIC INC | 2016-05-25 | — | — | CN | disclosed |
| CN-104183535-A | TRENCH FILLING METHOD AND PROCESSING APPARATUS | TOKYO ELECTRON LTD | 2014-12-03 | — | — | CN | disclosed |
| CN-102347266-B | Trench-filling method and film-forming system | TOKYO ELECTRON LTD | 2014-11-12 | — | — | CN | disclosed |
| CN-103928316-A | Method Of Forming Silicon Oxide Film | TOKYO ELECTRON LTD | 2014-07-16 | — | — | CN | disclosed |
| US-20130213301-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2013-08-22 | — | — | US | disclosed |
| US-8426117-B2 | Mask pattern forming method, fine pattern forming method, and film deposition apparatus | TOKYO ELECTRON LIMITED (JP) | 2013-04-23 | — | — | US | disclosed |
| CN-102569030-A | Thin film forming method and thin film forming apparatus | TOKYO ELECTRON LTD | 2012-07-11 | — | — | CN | disclosed |
| CN-102543795-A | Film formation apparatus | TOKYO ELECTRON LTD | 2012-07-04 | — | — | CN | disclosed |
| CN-102543830-A | Trench embedding method and film-forming apparatus | TOKYO ELECTRON LTD | 2012-07-04 | — | — | CN | disclosed |
| CN-101355022-B | Film formation method and apparatus for semiconductor process | TOKYO ELECTRON LTD | 2012-05-30 | — | — | CN | disclosed |
| CN-102347266-A | Trench-filling method and film-forming system | TOKYO ELECTRON LTD | 2012-02-08 | — | — | CN | disclosed |
| CN-101908481-A | Batch processing method for forming structure containing amorphous carbon film | TOKYO ELECTRON LTD | 2010-12-08 | — | — | CN | disclosed |
| US-20100081094-A1 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS | TOKYO ELECTRON LIMITED (JP) | 2010-04-01 | — | — | US | disclosed |
| CN-101355022-A | Film formation method and apparatus for semiconductor process | TOKYO ELECTRON LTD (JP) | 2009-01-28 | — | — | CN | disclosed |
| CN-101355022-A | Film formation method and apparatus for semiconductor process | TOKYO ELECTRON LTD (JP) | 2009-01-28 | — | — | CN | disclosed |