SCHEMBL3481428

SCHEMBL3481428

C=CC(C)CO[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL660180 0.77 TSHR (0.32)
SCHEMBL22654275 0.75
SCHEMBL2029521 0.74
SCHEMBL1015917 0.74
SCHEMBL10763797 0.72
SCHEMBL15268258 0.72
SCHEMBL4727789 0.72
SCHEMBL1585581 0.71
SCHEMBL22654153 0.71
SCHEMBL1270341 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110007563-B Negative photosensitive resin composition, spacer, protective film, and liquid crystal display element 奇美实业股份有限公司 2024-04-02 CN disclosed
WO-2022138857-A1 METHOD FOR PRODUCING HYDRATED ETHYLENE-VINYL ALCOHOL COPOLYMER PELLETS 株式会社クラレ 2022-06-30 WO disclosed
WO-2022138858-A1 METHOD FOR PRODUCING ETHYLENE-VINYL ALCOHOL COPOLYMER RESIN COMPOSITION 株式会社クラレ 2022-06-30 WO disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-3946131-A Glass fibers coated with silicon containing aminimide compounds OWENS-CORNING FIBERGLAS CORPORATION (US) 1976-03-23 US disclosed