⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9238298 | 0.92 | TSHR (0.35) | — | |
| SCHEMBL27888186 | 0.90 | TSHR (0.40) | — | |
| SCHEMBL12898518 | 0.88 | — | — | |
| SCHEMBL339790 | 0.88 | TSHR (0.35) | — | |
| SCHEMBL16497225 | 0.83 | TSHR (0.37) | — | |
| SCHEMBL3481918 | 0.83 | TSHR (0.32) | — | |
| SCHEMBL3481640 | 0.82 | — | — | |
| SCHEMBL12898483 | 0.82 | — | — | |
| SCHEMBL7768610 | 0.80 | TSHR (0.33) | — | |
| SCHEMBL4770420 | 0.80 | TSHR (0.39) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| CN-102308020-A | Insulating film material, and film formation method utilizing the material, and insulating film | NAT INST FOR MATERIAL SCIENCE | 2012-01-04 | — | — | CN | disclosed |
| US-20110313184-A1 | INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM | TAIYO NIPPON SANSO CORPORATION (JP) | 2011-12-22 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |