SCHEMBL3481719

SCHEMBL3481719

CCCC[Si](C)(Cl)CCC

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.33
LMNA P02545 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
THRB P10828 1/20 0.32
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708796 0.94 TSHR (0.38) TSHRLMNATDP1THRBALDH1A1
SCHEMBL10919178 0.91 TSHR (0.35) TSHRLMNATDP1THRBALDH1A1
SCHEMBL2594254 0.88 TSHR (0.39) TSHRLMNATDP1THRBALDH1A1
SCHEMBL1316645 0.87
SCHEMBL18108346 0.86 TSHR (0.44) TSHRLMNATHRBALDH1A1
SCHEMBL7522756 0.86 TSHR (0.44) TSHRLMNATHRBALDH1A1
SCHEMBL18108488 0.86 TSHR (0.44) TSHRLMNATHRBALDH1A1
SCHEMBL17966547 0.85 TSHR (0.41) TSHRLMNATDP1THRBALDH1A1
SCHEMBL8906657 0.83 TSHR (0.43) TSHRTDP1ALDH1A1
SCHEMBL8320849 0.83 TSHR (0.42) TSHRLMNATHRBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed