Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1314149 | 0.90 | TSHR (0.38) | TSHRALDH1A1 | |
| SCHEMBL3482116 | 0.86 | TSHR (0.35) | TSHRALDH1A1 | |
| SCHEMBL2269602 | 0.85 | — | — | |
| SCHEMBL1315956 | 0.81 | TSHR (0.42) | TSHRALDH1A1 | |
| SCHEMBL28796617 | 0.81 | TSHR (0.42) | TSHRALDH1A1 | |
| SCHEMBL1270666 | 0.79 | — | — | |
| SCHEMBL1317936 | 0.75 | TSHR (0.38) | TSHRALDH1A1 | |
| SCHEMBL1062898 | 0.75 | — | — | |
| SCHEMBL1314505 | 0.74 | TSHR (0.32) | TSHR | |
| SCHEMBL29156496 | 0.71 | TSHR (0.43) | TSHRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |