⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15756963 | 1.00 | — | — | |
| SCHEMBL10550660 | 1.00 | — | — | |
| SCHEMBL1996 | 1.00 | — | — | |
| SCHEMBL10771011 | 1.00 | — | — | |
| SCHEMBL7562304 | 1.00 | — | — | |
| SCHEMBL16822392 | 1.00 | — | — | |
| SCHEMBL16822386 | 1.00 | — | — | |
| SCHEMBL10609920 | 1.00 | — | — | |
| SCHEMBL120445 | 1.00 | — | — | |
| SCHEMBL10614951 | 1.00 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 102 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116547266-A | Synthesis method of anthranilic acid/amide compound and intermediate thereof | 皮埃企业有限公司 | 2023-08-04 | — | — | CN | claimed |
| CN-114538932-A | Preparation method of co-fired aluminum nitride ceramic substrate | 福建华清电子材料科技有限公司 | 2022-05-27 | — | — | CN | claimed |
| US-9373674-B2 | Sandwich damascene resistor | GLOBALFOUNDRIES Singapore Pte.Ltd. (SG) | 2016-06-21 | — | — | US | claimed |
| US-20150179729-A1 | SANDWICH DAMASCENE RESISTOR | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2015-06-25 | — | — | US | claimed |
| US-9012293-B2 | Sandwich damascene resistor | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2015-04-21 | — | — | US | claimed |
| US-20140191367-A1 | SANDWICH DAMASCENE RESISTOR | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2014-07-10 | — | — | US | claimed |
| US-8530954-B2 | Non-volatile memory devices including first and second blocking layer patterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-09-10 | — | — | US | claimed |
| US-8012829-B2 | Semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-06 | — | — | US | claimed |
| US-7968931-B2 | Non-volatile semiconductor memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20110014758-A1 | Semiconductor device and method of manufacturing the same | STARBOARD VALUE INTERMEDIATE FUND LP, AS COLLATERAL AGENT | 2011-01-20 | — | — | US | claimed |
| US-20060022252-A1 | Nonvolatile memory device and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. | 2006-02-02 | — | — | US | claimed |
| US-20040169238-A1 | Non-volatile semiconductor memory devices with a gate electrode having a higher work-function than a polysilicon layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-09-02 | — | — | US | claimed |
| US-6593638-B1 | Microelectronic integrated circuit structures comprising electroconductive buffer layers, doped perovskite thin films and insulator coverings, used for multilayer capacitors, ferro/piezoelectric and/or electrooptics | TEXAS INSTRUMENTS INCORPORATED | 2003-07-15 | — | — | US | claimed |
| US-6319542-B1 | FORMING A THIN-FILM MICROELECTRONIC CAPACITOR ON AN INTEGRATED CIRCUIT BY FORMING AN BUFFER LAYER, A LANTHANUM DOPED BARIUM STRONTIUM TITANATE LAYER, A BARIUM STRONTIUM TITANATE DIELECTRIC LAYER AND AN UPPER ELECTRODE | TEXAS INSTRUMENTS INCORPORATED | 2001-11-20 | — | — | US | claimed |
| US-6204069-B1 | Lightly donor doped electrodes for high-dielectric-constant materials | TEXAS INSTRUMENTS INCORPORATED | 2001-03-20 | — | — | US | claimed |
| US-5864049-A | Process for the preparation of mono- and dicarboxylic acids from unsaturated fatty acids and/or their derivatives | RHONE-POULENC CHIMIE (FR) | 1999-01-26 | — | — | US | claimed |
| EP-0701989-B1 | Process for preparing mono- and dicarboxylic acids from unsaturated fatty acids and/or their derivatives | NOVANCE S A (FR) | 1998-10-28 | — | — | EP | claimed |
| EP-0618597-B1 | Lightly donor doped electrodes for high-dielectric-constant materials | TEXAS INSTRUMENTS INC (US) | 1997-07-16 | — | — | EP | claimed |
| US-5476827-A | Reduction of carboxylic acids using bimetallic tin-ruthenium catalyst | RHONE-POULENC CHIMIE (FR) | 1995-12-19 | — | — | US | claimed |
| EP-0618597-A1 | Lightly donor doped electrodes for high-dielectric-constant materials | TEXAS INSTRUMENTS INCORPORATED (US) | 1994-10-05 | — | — | EP | claimed |