⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17557409 | 0.94 | — | — | |
| SCHEMBL11356945 | 0.94 | — | — | |
| SCHEMBL8503530 | 0.94 | — | — | |
| SCHEMBL17262 | 0.94 | — | — | |
| SCHEMBL137694 | 0.94 | — | — | |
| SCHEMBL8529454 | 0.94 | — | — | |
| SCHEMBL7225807 | 0.88 | — | — | |
| SCHEMBL913498 | 0.88 | — | — | |
| SCHEMBL1370871 | 0.88 | — | — | |
| SCHEMBL1367445 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 140 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9721654-B1 | Memory device | KABUSHIKI KAISHA TOSHIBA (JP) | 2017-08-01 | — | — | US | claimed |
| US-20160071853-A1 | SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2016-03-10 | — | — | US | claimed |
| US-8779503-B2 | Nonvolatile semiconductor memory | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-07-15 | — | — | US | claimed |
| EP-1782474-B1 | HIGH STRAIN GLASS/GLASS-CERAMIC CONTAINING SEMICONDUCTOR-ON-INSULATOR STRUCTURES | CORNING INC (US) | 2013-11-27 | — | — | EP | claimed |
| US-20130056819-A1 | NONVOLATILE SEMICONDUCTOR MEMORY | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-03-07 | — | — | US | claimed |
| US-20130015518-A1 | SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-01-17 | — | — | US | claimed |
| US-8193577-B2 | Nonvolatile semiconductor memory device | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-06-05 | — | — | US | claimed |
| US-8071447-B2 | Semiconductor device manufacturing method | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-12-06 | — | — | US | claimed |
| US-20100203704-A1 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-08-12 | — | — | US | claimed |
| US-20100072535-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE | TOSHIBA MEMORY CORPORATION (JP) | 2010-03-25 | — | — | US | claimed |
| US-7473969-B2 | High strain glass/glass-ceramic containing semiconductor-on-insulator structures | CORNING INCORPORATED (US) | 2009-01-06 | — | — | US | claimed |
| EP-1782474-A2 | HIGH STRAIN GLASS/GLASS-CERAMIC CONTAINING SEMICONDUCTOR-ON-INSULATOR STRUCTURES | Corning Incorporated (US) | 2007-05-09 | — | — | EP | claimed |
| WO-2006023594-A2 | HIGH STRAIN GLASS/GLASS-CERAMIC CONTAINING SEMICONDUCTOR-ON-INSULATOR STRUCTURES | CORNING INCORPORATED (US) | 2006-03-02 | — | — | WO | claimed |
| US-20060038228-A1 | High strain glass/glass-ceramic containing semiconductor-on-insulator structures | CORNING INCORPORATED | 2006-02-23 | — | — | US | claimed |
| US-10658480-B2 | Memory device | TOSHIBA MEMORY CORPORATION (JP) | 2020-05-19 | — | — | US | disclosed |
| US-20190296118-A1 | MEMORY DEVICE | TOSHIBA MEMORY CORPORATION (JP) | 2019-09-26 | — | — | US | disclosed |
| US-10008509-B2 | Non-volatile semiconductor memory device | TOSHIBA MEMORY CORPORATION (JP) | 2018-06-26 | — | — | US | disclosed |
| US-20030063629-A1 | Multimode fiber laser gratings | CORNING INCORPORATED | 2003-04-03 | — | — | US | disclosed |
| US-20020159736-A1 | Cladding-pumped 3-level fiber laser/amplifier | CORNING INCORPORATED | 2002-10-31 | — | — | US | disclosed |
| EP-1246321-A2 | Cladding-pumped 3-level fiber laser/amplifier | CORNING INCORPORATED (US) | 2002-10-02 | — | — | EP | disclosed |