SCHEMBL35573

SCHEMBL35573

CCN(CC)[SiH2]N(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28265606 0.96
SCHEMBL17717613 0.84
SCHEMBL31633309 0.83 CA12 (0.31)
SCHEMBL22042296 0.81
SCHEMBL21882100 0.81
SCHEMBL2101236 0.81
SCHEMBL28774806 0.78 MAPT (0.36)
SCHEMBL16606990 0.78
SCHEMBL22703508 0.78
SCHEMBL16284821 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 4242 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4748968-A1 METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS Hansol Chemical Co., Ltd (KR) 2026-05-27 EP claimed
CN-122080276-A Preparation method and application of polypropylene, polypropylene and application 2026-05-26 CN claimed
CN-122080277-A Polypropylene preparation method, polypropylene and application 2026-05-26 CN claimed
CN-122080275-A Polypropylene and preparation method and application thereof 2026-05-26 CN claimed
US-20260136856-A1 METHOD AND SYSTEM FOR FORMING SILICON NITRIDE ON A SIDEWALL OF A FEATURE ASM IP HOLDING BV (NL) 2026-05-14 US claimed
US-20260136855-A1 METHOD OF SELECTIVE DEPOSITION ON SUBSTRATE, SUBSTRATE FABRICATED THEREBY, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE COMPRISING SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-14 US claimed
US-12628578-B2 Substrate processing method ASM IP HOLDING B.V. (NL) 2026-05-12 US claimed
EP-4735662-A1 IMPROVED DEPOSITION OF HIGH QUALITY METAL OXIDE AND METAL NITRIDE LAYERS Forge Nano Inc. (US) 2026-05-06 EP claimed
EP-4204219-B1 PARTIAL COATING OF INTRAOCULAR LENSES USING SPATIAL ALD AMO GRONINGEN BV (NL) 2026-05-06 EP claimed
US-20260116899-A1 EXCHANGE RESINS FOR IMPURITY REMOVAL ENTEGRIS INC (US) 2026-04-30 US claimed
WO-2008142652-A1 NEW METAL PRECURSORS FOR SEMICONDUCTOR APPLICATIONS L'AIR LIQUIDE-SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (US) 2008-11-27 WO claimed
WO-2008121463-A1 METHOD FOR FORMING STRAINED SILICON NITRIDE FILMS AND A DEVICE CONTAINING SUCH FILMS TOKYO ELECTRON LIMITED (JP) 2008-10-09 WO claimed
US-20080242116-A1 Method for forming strained silicon nitride films and a device containing such films TOKYO ELECTRON LIMITED (JP) 2008-10-02 US claimed
US-20080081104-A1 chemical vapor deposition; supplying an aminosilane gas to a substrate surface forming absorption layer containing silicon, supplying oxidizing gas selected from oxygen, ozone, nitrogen oxide, nitrogen dioxide, dinitrogen oxide, and water vapor to oxidize silicon to form SiO2 film on target substrate TOKYO ELECTRON LIMITED (JP) 2008-04-03 US claimed
WO-2008002415-A2 PRECURSORS FOR DEPOSITING SILICON CONTAINING FILMS AND PROCESSES THEREOF PRAXAIR TECHNOLOGY, INC. (US) 2008-01-03 WO claimed
US-20070299274-A1 Organometallic compounds PRAXAIR TECHNOLOGY, INC. 2007-12-27 US claimed
EP-0104179-B1 SCAVENGERS FOR ONE-COMPONENT ALKOXY-FUNCTIONAL RTV COMPOSITIONS AND PROCESSES GENERAL ELECTRIC COMPANY (US) 1991-01-02 EP claimed
EP-0104179-A4 SCAVENGERS FOR ONE-COMPONENT ALKOXY-FUNCTIONAL RTV COMPOSITIONS AND PROCESSES. GEN ELECTRIC (US) 1984-07-24 EP claimed
EP-0104179-A1 SCAVENGERS FOR ONE-COMPONENT ALKOXY-FUNCTIONAL RTV COMPOSITIONS AND PROCESSES. GEN ELECTRIC (US) 1984-04-04 EP claimed
WO-1983002948-A1 SCAVENGERS FOR ONE-COMPONENT ALKOXY-FUNCTIONAL RTV COMPOSITIONS AND PROCESSES GEN ELECTRIC (US) 1983-09-01 WO claimed