⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30938254 | 1.00 | — | — | |
| SCHEMBL21327767 | 1.00 | — | — | |
| SCHEMBL29357566 | 1.00 | — | — | |
| SCHEMBL29604418 | 0.87 | — | — | |
| SCHEMBL22028739 | 0.87 | — | — | |
| Zinc Ion SCHEMBL30493973 | 0.87 | — | — | |
| SCHEMBL31443285 | 0.87 | — | — | |
| SCHEMBL17063558 | 0.87 | — | — | |
| SCHEMBL515557 | 0.87 | — | — | |
| SCHEMBL18815472 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 7316 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12641872-B2 | Semiconductor device and a method of manufacturing the semiconductor device | SK Hynix Inc. (KR) | 2026-05-26 | — | — | US | claimed |
| CN-119894024-B | Full-printing film patterning method | SHANGHAI UNIVERSITY (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-116072733-B | High-durability FeFET (field effect transistor) based on ferroelectric hafnium aluminum oxide and aluminum oxide gate stack and preparation method thereof | 北京大学 | 2026-05-22 | — | — | CN | claimed |
| WO-2025167240-A9 | CHIP AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE | 华为技术有限公司 | 2026-05-15 | — | — | WO | claimed |
| CN-122028479-A | Semiconductor device with engineering gate dielectric stack and preparation method thereof | 赛晶亚太半导体科技(浙江)有限公司 | 2026-05-12 | — | — | CN | claimed |
| US-20260096107-A1 | 1S1R-BASED SELF-SELECTIVE MEMORY AND MANUFACTURING METHOD THEREFOR | PEKING UNIVERSITY (CN) | 2026-04-02 | — | — | US | claimed |
| US-20260090370-A1 | METAL-INSULATOR-METAL DEVICE WITH IMPROVED PERFORMANCE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-03-26 | — | — | US | claimed |
| EP-3857463-B1 | APPLICATIONS OF BACK-END-OF-LINE (BEOL) CAPACITORS IN COMPUTE-IN-MEMORY (CIM) CIRCUITS | INTEL CORP (US) | 2026-03-25 | — | — | EP | claimed |
| EP-4696117-A1 | RRAM WITH METAL-FERROELECTRIC-INSULATOR-METAL STACK | International Business Machines Corporation (US) | 2026-02-18 | — | — | EP | claimed |
| US-12507474-B2 | Input/output semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-12-23 | — | — | US | claimed |
| US-20050068834-A1 | Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same | SAMSUNG ELECTRONICS CO. LTD. (KR) | 2005-03-31 | — | — | US | claimed |
| EP-1519417-A2 | Magnetic random access memory comprising MTJ layer and method of manufacturing | Samsung Electronics Co., Ltd. (KR) | 2005-03-30 | — | — | EP | claimed |
| US-20050017174-A1 | Laser stimulated atom probe characterization of semiconductor and dielectric structures | CHISM WILLIAM W (US) | 2005-01-27 | — | — | US | claimed |
| WO-2005003731-A2 | LASER STIMULATED ATOM PROBE CHARACTERIZATION OF SEMICONDUCTOR AND DIELECTRIC STRUCTURES | CHISM WILLIAM W II (US) | 2005-01-13 | — | — | WO | claimed |
| US-20040214354-A1 | Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer | MARSH EUGENE P (US) | 2004-10-28 | — | — | US | claimed |
| US-20040161899-A1 | Radical oxidation and/or nitridation during metal oxide layer deposition process | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2004-08-19 | — | — | US | claimed |
| US-20040047085-A1 | CPP and MTJ reader design with continuous exchange-coupled free layer | HEADWAY TECHNOLOGIES, INC. | 2004-03-11 | — | — | US | claimed |
| US-6696332-B2 | Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing | TEXAS INSTRUMENTS INCORPORATED | 2004-02-24 | — | — | US | claimed |
| US-20030211692-A1 | Method of fabricating trap type nonvolatile memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-11-13 | — | — | US | claimed |
| US-20030116804-A1 | Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing | TEXAS INSTRUMENTS INCORPORATED | 2003-06-26 | — | — | US | claimed |