⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL706567 | 0.91 | — | — | |
| SCHEMBL13089474 | 0.81 | — | — | |
| SCHEMBL976689 | 0.81 | — | — | |
| SCHEMBL706582 | 0.80 | — | — | |
| SCHEMBL704644 | 0.80 | — | — | |
| SCHEMBL4275374 | 0.78 | — | — | |
| SCHEMBL13416878 | 0.78 | — | — | |
| SCHEMBL13300445 | 0.78 | — | — | |
| SCHEMBL3616402 | 0.77 | — | — | |
| SCHEMBL2125687 | 0.76 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-9116427-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-08-25 | — | — | US | disclosed |
| US-20150160556-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| US-8993223-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2015-03-31 | — | — | US | disclosed |
| WO-2013061601-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | WO | disclosed |
| US-20130107235-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130101942-A1 | METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2013-04-25 | — | — | US | disclosed |
| EP-2579304-A1 | INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS | JSR Corporation (JP) | 2013-04-10 | — | — | EP | disclosed |
| US-20130084394-A1 | INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL | JSR CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20120183908-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20100261925-A1 | METHOD FOR PRODUCING SILICON COMPOUND | JSR CORPORATION (JP) | 2010-10-14 | — | — | US | disclosed |
| US-20100178620-A1 | INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-07-15 | — | — | US | disclosed |
| US-20100174103-A1 | MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME | JSR CORPORATION (JP) | 2010-07-08 | — | — | US | disclosed |
| US-20100140754-A1 | FILM-FORMING MATERIAL, SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME | JSR CORPORATION (JP) | 2010-06-10 | — | — | US | disclosed |