Hydrogen Sulfide

Hydrogen Sulfide

SCHEMBL3623091

Cc1ccc(S(=O)(=O)OC2CCCCC2=O)cc1.S

nearest known ligand 0.46

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 2/20 0.46
CYP1A2 P05177 1/20 0.46
ALDH1A1 P00352 4/20 0.42
CYP3A4 P08684 2/20 0.42
TSHR P16473 1/20 0.42
POLB P06746 3/20 0.41
TP53 P04637 1/20 0.41
ENPP3 O14638 2/20 0.40
ENPP1 P22413 2/20 0.40
ENPP2 Q13822 2/20 0.40
ADORA3 P0DMS8 1/20 0.40
KMT2A Q03164 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
CYP2C19 P33261 1/20 0.39
GAA P10253 2/20 0.39
NPC1 O15118 1/20 0.39
RAB9A P51151 1/20 0.39
KCNH2 Q12809 1/20 0.39
ACHE P22303 1/20 0.39
MAPT P10636 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12204577 0.98 CYP2D6 (0.47) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL10809927 0.98 CYP2D6 (0.47) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL2632449 0.98 CYP2D6 (0.47) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL10810981 0.97 CYP2D6 (0.46) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL10814260 0.94 CYP2D6 (0.48) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL2632440 0.84 CYP2D6 (0.45) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL12204220 0.84 CYP2D6 (0.45) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL8744474 0.77 CYP2D6 (0.60) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL777214 0.77 CYP2D6 (0.63) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR
SCHEMBL8744470 0.77 CYP2D6 (0.60) CYP2D6CYP1A2ALDH1A1CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115044040-B Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern forming method 信越化学工业株式会社 2024-07-02 CN disclosed
CN-111381447-B Photosensitive resin composition, laminate, and pattern forming method 信越化学工业株式会社 2024-03-08 CN disclosed
CN-111234236-B Siloxane polymer containing isocyanuric acid and polyether skeleton, photosensitive resin composition, and pattern formation method 信越化学工业株式会社 2023-03-24 CN disclosed
CN-111205463-B Polysiloxane skeleton polymer, photosensitive resin composition, pattern forming method and manufacturing of optical semiconductor device 信越化学工业株式会社 2023-02-14 CN disclosed
CN-108388082-B Photosensitive resin composition, photosensitive dry film, photosensitive resin coating and pattern forming method 信越化学工业株式会社(JP) 2023-01-13 CN disclosed
CN-115044040-A Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern formation method 信越化学工业株式会社 2022-09-13 CN disclosed
CN-115023653-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, and pattern formation method 信越化学工业株式会社 2022-09-06 CN disclosed
CN-114746809-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method, and light-emitting element 信越化学工业株式会社 2022-07-12 CN disclosed
CN-109422881-B Epoxy group-containing isocyanurate-modified silicone resin, photosensitive resin composition, photosensitive dry film, laminate, and pattern formation method 信越化学工业株式会社 2022-04-19 CN disclosed
CN-114253069-A Photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, and surface protective film 信越化学工业株式会社 2022-03-29 CN disclosed
CN-105487337-B Chemically amplified negative resist composition, photocurable dry film, method for producing the same, and patterning method 信越化学工业株式会社 2020-06-05 CN disclosed
CN-111234236-A Siloxane polymer containing isocyanuric acid and polyether skeleton, photosensitive resin composition, and pattern formation method 信越化学工业株式会社 2020-06-05 CN disclosed
CN-111198480-A Photosensitive resin composition, pattern forming method and antireflection film 信越化学工业株式会社 2020-05-26 CN disclosed
CN-111142332-A Photosensitive resin composition and photosensitive dry film 信越化学工业株式会社 2020-05-12 CN disclosed
CN-111045292-A Photosensitive resin composition, photosensitive dry film and pattern forming method 信越化学工业株式会社 2020-04-21 CN disclosed
CN-110727175-A Photosensitive resin composition and pattern forming method 信越化学工业株式会社 2020-01-24 CN disclosed
CN-110727174-A Photosensitive resin composition, photosensitive resin coating, photosensitive dry film and black matrix 信越化学工业株式会社 2020-01-24 CN disclosed
CN-105315467-B Polymer having organosilicon structure, negative resist composition, photocurable dry film, and patterning method 信越化学工业株式会社 2019-12-20 CN disclosed
EP-2219076-B1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2013-11-20 EP disclosed
EP-2219076-A1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN Mitsubishi Gas Chemical Company, Inc. (JP) 2010-08-18 EP disclosed