SCHEMBL3627014

SCHEMBL3627014

c1ccc2c(C3CCCCCCCCC3)c(C3CCCCCCCCC3)c(C3CCCCCCCCC3)cc2c1

nearest known ligand 0.47

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP1B1 Q16678 2/20 0.39
TDP1 Q9NUW8 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
ALDH1A1 P00352 2/20 0.35
HIF1A Q16665 2/20 0.35
HSD17B10 Q99714 2/20 0.35
CYP1A2 P05177 1/20 0.35
CYP2D6 P10635 1/20 0.35
CYP2C9 P11712 1/20 0.35
CYP2C19 P33261 1/20 0.35
ATM Q13315 1/20 0.35
PDE5A O76074 1/20 0.35
EPHX1 P07099 1/20 0.35
PSMB5 P28074 2/20 0.34
DHODH Q02127 1/20 0.33
CHRM1 P11229 1/20 0.33
PTGDR2 Q9Y5Y4 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4645332 0.85 CYP1B1 (0.43) CYP1B1TDP1L3MBTL1ALDH1A1HIF1A
SCHEMBL2150815 0.85 CYP1B1 (0.37) CYP1B1TDP1L3MBTL1ALDH1A1HIF1A
SCHEMBL10898473 0.81 CYP1A2 (0.42) CYP1B1TDP1L3MBTL1ALDH1A1HIF1A
SCHEMBL4038396 0.80 CYP1B1 (0.43) CYP1B1TDP1L3MBTL1ALDH1A1HIF1A
SCHEMBL30129727 0.80 CYP1B1 (0.43) CYP1B1TDP1L3MBTL1ALDH1A1HIF1A
SCHEMBL3664220 0.80 CYP1B1 (0.43) CYP1B1TDP1L3MBTL1ALDH1A1HIF1A
SCHEMBL17323568 0.80 KDM4E (0.47) CYP1B1ALDH1A1HSD17B10CYP1A2CYP2C19
SCHEMBL17323563 0.80 KDM4E (0.47) CYP1B1ALDH1A1HSD17B10CYP1A2CYP2C19
SCHEMBL17323565 0.80 KDM4E (0.47) CYP1B1ALDH1A1HSD17B10CYP1A2CYP2C19
SCHEMBL2758448 0.79 CYP2D6 (0.40) CYP1B1ALDH1A1HIF1AHSD17B10CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8592134-B2 Composition for forming base film for lithography and method for forming multilayer resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-11-26 US disclosed
EP-2219076-B1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2013-11-20 EP disclosed
US-20100316950-A1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-12-16 US disclosed
EP-2219076-A1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN Mitsubishi Gas Chemical Company, Inc. (JP) 2010-08-18 EP disclosed