⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL30674780 | 1.00 | — | — | |
| Zinc Ion SCHEMBL29886607 | 1.00 | — | — | |
| Xenon SCHEMBL9104525 | 0.89 | — | — | |
| Zinc Ion SCHEMBL4848214 | 0.89 | — | — | |
| Hydrogen Sulfide SCHEMBL9111151 | 0.89 | — | — | |
| Zinc Ion SCHEMBL23671963 | 0.89 | — | — | |
| Zinc Ion SCHEMBL15842344 | 0.89 | — | — | |
| Zinc Ion SCHEMBL18764056 | 0.89 | — | — | |
| Zinc Ion SCHEMBL16970954 | 0.89 | — | — | |
| Zinc Ion SCHEMBL348887 | 0.89 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 61136 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260150569-A1 | DISPLAY DEVICE | LG DISPLAY CO., LTD. (KR) | 2026-05-28 | — | — | US | claimed |
| US-20260150605-A1 | METHODS FOR SUBSTRATE PROCESSING | ASM IP HOLDING B.V. (NL) | 2026-05-28 | — | — | US | claimed |
| US-20260150280-A1 | THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MANUFACTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-28 | — | — | US | claimed |
| CN-224290546-U | Display device and electronic device comprising same | SAMSUNG DISPLAY CO.,LTD. (KR) | 2026-05-26 | — | — | CN | claimed |
| CN-122094101-A | Semiconductor device and method for manufacturing the same | — | 2026-05-26 | — | — | CN | claimed |
| CN-122094098-A | Semiconductor structure, preparation method thereof and semiconductor device | — | 2026-05-26 | — | — | CN | claimed |
| CN-122094095-A | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers | — | 2026-05-26 | — | — | CN | claimed |
| CN-122084718-A | 3T1C gas response internal feature controllable extraction structure | — | 2026-05-26 | — | — | CN | claimed |
| US-12637772-B2 | Method for crystallization of metal oxide thin film by using thermal dissipation annealing | INJE UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION (KR) | 2026-05-26 | — | — | US | claimed |
| CN-121586378-B | All-optical-control photoelectric synaptic device and preparation method and application thereof | ZHEJIANG UNIVERSITY (CN) | 2026-05-26 | — | — | CN | claimed |
| EP-1801881-A1 | Organic light emitting display device capable of displaying an image in one or in two surfaces | Samsung SDI Co., Ltd. (KR) | 2007-06-27 | — | — | EP | claimed |
| CN-1988169-A | Plate display device and driving method therefor | SAMSUNG SDI CO LTD (KR) | 2007-06-27 | — | — | CN | claimed |
| US-20070138941-A1 | Flat panel display and driving method using the same | SAMSUNG DISPLAY CO., LTD. (KR) | 2007-06-21 | — | — | US | claimed |
| WO-2007062031-A2 | RECTIFYING CONTACT TO AN N-TYPE OXIDE MATERIAL OR A SUBSTANTIALLY INSULATING OXIDE MATERIAL | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2007-05-31 | — | — | WO | claimed |
| US-20070114528-A1 | Rectifying contact to an n-type oxide material or a substantially insulating oxide material | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. | 2007-05-24 | — | — | US | claimed |
| EP-1770672-A1 | Flat panel display and a method of driving the same | Samsung SDI Co., Ltd. (KR) | 2007-04-04 | — | — | EP | claimed |
| US-20070069995-A1 | Flat panel display and a method of driving the same | SAMSUNG MOBILE DISPLAY CO., LTD. (KR) | 2007-03-29 | — | — | US | claimed |
| WO-2007017689-A2 | NANOROD THIN-FILM TRANSISTORS | CAMBRIDGE ENTERPRISE LIMITED (GB) | 2007-02-15 | — | — | WO | claimed |
| US-20070001186-A1 | (Al, Ga, In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method | JAPAN SCIENCE AND TECHNOLOGY AGENCY (JP) | 2007-01-04 | — | — | US | claimed |
| WO-2006138626-A2 | (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2006-12-28 | — | — | WO | claimed |