⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Selenium SCHEMBL1204343 | 0.82 | — | — | |
| Selenium SCHEMBL177385 | 0.82 | — | — | |
| SCHEMBL30415302 | 0.82 | — | — | |
| Selenium SCHEMBL400941 | 0.82 | — | — | |
| Selenium SCHEMBL9854069 | 0.82 | — | — | |
| Selenium SCHEMBL6766758 | 0.82 | — | — | |
| SCHEMBL29755692 | 0.82 | — | — | |
| Selenium SCHEMBL3156660 | 0.82 | — | — | |
| SCHEMBL29456409 | 0.82 | — | — | |
| Selenium SCHEMBL3844007 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11696520-B2 | Semiconductor device having three-dimensional cell structure | SK Hynix Inc. (KR) | 2023-07-04 | — | — | US | claimed |
| CN-111129066-B | Phase change random access memory device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2022-08-02 | — | — | CN | claimed |
| US-20220140238-A1 | SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME | SK Hynix Inc. | 2022-05-05 | — | — | US | claimed |
| CN-114429969-A | Semiconductor device having three-dimensional cell structure and method of manufacturing the same | 爱思开海力士有限公司 | 2022-05-03 | — | — | CN | claimed |
| US-12471509-B2 | Method of manufacturing a semiconductor device having three-dimensional cell structure | SK Hynix Inc. (KR) | 2025-11-11 | — | — | US | disclosed |
| CN-110176471-B | Cross-point array device and method of manufacturing the same | 爱思开海力士有限公司 | 2023-10-03 | — | — | CN | disclosed |
| US-20230292638-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE | SK Hynix Inc. (KR) | 2023-09-14 | — | — | US | disclosed |
| CN-109786548-B | Cross-point array device and method of manufacturing the same | 爱思开海力士有限公司 | 2023-07-18 | — | — | CN | disclosed |
| US-11696520-B2 | Semiconductor device having three-dimensional cell structure | SK Hynix Inc. (KR) | 2023-07-04 | — | — | US | disclosed |
| CN-109904312-B | Resistive switching device | 爱思开海力士有限公司 | 2022-10-25 | — | — | CN | disclosed |
| CN-111129066-B | Phase change random access memory device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2022-08-02 | — | — | CN | disclosed |
| US-20220140238-A1 | SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME | SK Hynix Inc. | 2022-05-05 | — | — | US | disclosed |
| US-8841643-B2 | Semiconductor memory device including buffer electrode | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-09-23 | — | — | US | disclosed |
| US-8785213-B2 | Method of fabricating non-volatile memory device having small contact and related devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-07-22 | — | — | US | disclosed |
| US-8599607-B2 | Diode and memory device having a diode | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) | 2013-12-03 | — | — | US | disclosed |
| US-20130280882-A1 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-10-24 | — | — | US | disclosed |
| US-20130102150-A1 | METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE HAVING SMALL CONTACT AND RELATED DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-04-25 | — | — | US | disclosed |
| US-20120147668-A1 | Diode and Memory Device Having a Diode | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH | 2012-06-14 | — | — | US | disclosed |
| US-20120119181-A1 | SEMICONDUCTOR DEVICE INCLUDING BUFFER ELECTRODE, METHOD OF FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-05-17 | — | — | US | disclosed |
| US-20110300685-A1 | METHODS FOR FABRICATING PHASE CHANGE MEMORY DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-12-08 | — | — | US | disclosed |