SCHEMBL3787677

SCHEMBL3787677

[SiH3]N(Cl)Cl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15479627 0.83
SCHEMBL9320335 0.65
SCHEMBL11883553 0.61
SCHEMBL35999 0.61
Ammonia Solution, Strong SCHEMBL28373563 0.55
SCHEMBL3163577 0.55
SCHEMBL5169114 0.55
SCHEMBL28584824 0.55
Ammonia Solution, Strong SCHEMBL5363838 0.55
SCHEMBL7738065 0.55

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7833504-B2 Silylated carbon nanotubes and methods of making same THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK (US) 2010-11-16 US claimed
US-20090060815-A1 Silylated carbon nanotubes and methods of making same THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK 2009-03-05 US claimed
US-7833504-B2 Silylated carbon nanotubes and methods of making same THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK (US) 2010-11-16 US disclosed
US-7833504-B2 Silylated carbon nanotubes and methods of making same THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK (US) 2010-11-16 US disclosed
US-20090060815-A1 Silylated carbon nanotubes and methods of making same THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK 2009-03-05 US disclosed
US-20090060815-A1 Silylated carbon nanotubes and methods of making same THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK 2009-03-05 US disclosed
US-6080677-A Method for preventing micromasking in shallow trench isolation process etching VLSI TECHNOLOGY, INC. (US) 2000-06-27 US disclosed