Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA4 | P22748 | 2/20 | 0.50 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride Ion SCHEMBL939137 | 1.00 | — | — | |
| SCHEMBL29477168 | 0.71 | — | — | |
| Water SCHEMBL15557231 | 0.71 | — | — | |
| SCHEMBL8118702 | 0.71 | — | — | |
| SCHEMBL10818636 | 0.71 | — | — | |
| SCHEMBL27427293 | 0.71 | — | — | |
| SCHEMBL11347194 | 0.71 | — | — | |
| Fluoride Ion SCHEMBL22981870 | 0.50 | — | — | |
| Fluoride Ion SCHEMBL509009 | 0.50 | — | — | |
| Fluoride Ion SCHEMBL2030259 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7687801-B2 | Dopant material, dopant material manufacturing method, and semiconductor device using the same | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2010-03-30 | — | — | US | claimed |
| US-20100012923-A1 | DOPANT MATERIAL, DOPANT MATERIAL MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE SAME | NEC CORPORATION | 2010-01-21 | — | — | US | claimed |
| US-7687801-B2 | Dopant material, dopant material manufacturing method, and semiconductor device using the same | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2010-03-30 | — | — | US | disclosed |
| US-20100012923-A1 | DOPANT MATERIAL, DOPANT MATERIAL MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE SAME | NEC CORPORATION | 2010-01-21 | — | — | US | disclosed |