Fluoride

Fluoride

SCHEMBL3793483

F.F.F.F.F.F.F.[TeH2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL29093769 1.00
Fluoride SCHEMBL21074152 1.00
Fluoride SCHEMBL27668851 1.00
Fluoride SCHEMBL28271072 1.00
Fluoride SCHEMBL28303484 0.82
Fluoride SCHEMBL21074150 0.82
Fluoride SCHEMBL49263 0.71
Fluoride SCHEMBL9318976 0.71
Fluoride Ion F-18 SCHEMBL12714265 0.71
F-18 SCHEMBL117749 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7687801-B2 Dopant material, dopant material manufacturing method, and semiconductor device using the same NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2010-03-30 US claimed
US-20100012923-A1 DOPANT MATERIAL, DOPANT MATERIAL MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE SAME NEC CORPORATION 2010-01-21 US claimed
US-7687801-B2 Dopant material, dopant material manufacturing method, and semiconductor device using the same NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2010-03-30 US disclosed
US-20100012923-A1 DOPANT MATERIAL, DOPANT MATERIAL MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE SAME NEC CORPORATION 2010-01-21 US disclosed