SCHEMBL379671

SCHEMBL379671

[Al+3].[Al+3].[O-2].[O-2].[O-2].[Zn].[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17711033 0.87
SCHEMBL15398526 0.87
SCHEMBL216685 0.87
SCHEMBL529978 0.87
SCHEMBL2897143 0.87
SCHEMBL10379776 0.82
SCHEMBL2945455 0.82
SCHEMBL7729 0.82
SCHEMBL8854401 0.82
SCHEMBL4956668 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 201 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120192159-A Preparation method of zinc-aluminum-oxide AZO alloy target 湖南玉丰真空科学技术有限公司 2025-06-24 CN claimed
CN-119252731-B Silicon substrate gallium nitride wafer containing large mismatch stress regulation structure and preparation method and application thereof 深圳市中科半导体科技有限公司 2025-05-02 CN claimed
CN-119800347-A Cold spraying zinc-aluminum composite coating method for power transmission and transformation equipment and zinc-aluminum composite coating 华北电力科学研究院有限责任公司 2025-04-11 CN claimed
CN-119683867-A Preparation method of toughened low-emissivity coated glass 新福兴玻璃工业集团有限公司 2025-03-25 CN claimed
CN-119683874-A Preparation method of toughened low-emissivity coated glass 新福兴玻璃工业集团有限公司 2025-03-25 CN claimed
CN-119252731-A Silicon substrate gallium nitride wafer containing large mismatch stress regulation structure and preparation method and application thereof 深圳市中科半导体科技有限公司 2025-01-03 CN claimed
US-12172896-B2 ATR-based hydrogen process and plant HALDOR TOPSØE A/S (DK) 2024-12-24 US claimed
US-20240059563-A1 ATR-BASED HYDROGEN PROCESS AND PLANT HALDOR TOPSØE A/S (DK) 2024-02-22 US claimed
EP-4045457-A1 ATR-BASED HYDROGEN PROCESS AND PLANT Topsoe A/S (DK) 2022-08-24 EP claimed
US-20220194789-A1 ATR-BASED HYDROGEN PROCESS AND PLANT HALDOR TOPSØE A/S (DK) 2022-06-23 US claimed
US-20030150711-A1 Coated article with high visible transmission and low emissivity Guardian Europe S.à r.l. (LU) 2003-08-14 US claimed
WO-2003033427-A1 COATED ARTICLE WITH HIGH VISIBLE TRANSMISSION AND LOW EMISSIVITY GUARDIAN INDUSTRIES CORP. (US) 2003-04-24 WO claimed
EP-1115670-B1 ALKALI METAL DIFFUSION BARRIER LAYER PPG IND OHIO INC (US) 2002-07-17 EP claimed
US-6352755-B1 Alkali metal diffusion barrier layer PPG INDUSTRIES OHIO, INC. 2002-03-05 US claimed
EP-1115670-A1 ALKALI METAL DIFFUSION BARRIER LAYER PPG Industries Ohio, Inc. (US) 2001-07-18 EP claimed
WO-2000015571-A1 ALKALI METAL DIFFUSION BARRIER LAYER PPG INDUSTRIES OHIO, INC. (US) 2000-03-23 WO claimed
EP-0705801-B1 Alkali metal diffusion barrier layer PPG INDUSTRIES INC (US) 1998-12-02 EP claimed
EP-0787696-A1 Alkali metal diffusion barrier layer PPG INDUSTRIES, INC. (US) 1997-08-06 EP claimed
CN-1134920-A Alkali metal diffusion barrier layer PPG INDUSTRIES INC (US) 1996-11-06 CN claimed
EP-0705801-A1 Alkali metal diffusion barrier layer PPG INDUSTRIES, INC. (US) 1996-04-10 EP claimed