SCHEMBL3797509

SCHEMBL3797509

CN([SiH3])C(C)(C)[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27747854 0.76
SCHEMBL2388550 0.76
SCHEMBL27979607 0.70
SCHEMBL6722638 0.67
SCHEMBL2100376 0.64
SCHEMBL2102685 0.64
SCHEMBL27887959 0.64
SCHEMBL35296 0.61
SCHEMBL2415742 0.61
SCHEMBL51749 0.61

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10170354-B2 Subtractive methods for creating dielectric isolation structures within open features TOKYO ELECTRON LIMITED (JP) 2019-01-01 US claimed
US-9633847-B2 Using sub-resolution openings to aid in image reversal, directed self-assembly, and selective deposition TOKYO ELECTRON LIMITED (JP) 2017-04-25 US claimed
US-20160300756-A1 SUBTRACTIVE METHODS FOR CREATING DIELECTRIC ISOLATION STRUCTURES WITHIN OPEN FEATURES TOKYO ELECTRON LIMITED (JP) 2016-10-13 US claimed
US-20160300711-A1 USING SUB-RESOLUTION OPENINGS TO AID IN IMAGE REVERSAL, DIRECTED SELF-ASSEMBLY, AND SELECTIVE DEPOSITION TOKYO ELECTRON LIMITED (JP) 2016-10-13 US claimed
US-10170354-B2 Subtractive methods for creating dielectric isolation structures within open features TOKYO ELECTRON LIMITED (JP) 2019-01-01 US disclosed
US-9633847-B2 Using sub-resolution openings to aid in image reversal, directed self-assembly, and selective deposition TOKYO ELECTRON LIMITED (JP) 2017-04-25 US disclosed
US-20160300756-A1 SUBTRACTIVE METHODS FOR CREATING DIELECTRIC ISOLATION STRUCTURES WITHIN OPEN FEATURES TOKYO ELECTRON LIMITED (JP) 2016-10-13 US disclosed
US-20160300711-A1 USING SUB-RESOLUTION OPENINGS TO AID IN IMAGE REVERSAL, DIRECTED SELF-ASSEMBLY, AND SELECTIVE DEPOSITION TOKYO ELECTRON LIMITED (JP) 2016-10-13 US disclosed
US-8877073-B2 Imprint lithography template CANON NANOTECHNOLOGIES, INC. (US) 2014-11-04 US disclosed
WO-2010062319-A1 IMPRINT LITHOGRAPHY TEMPLATE MOLECULAR IMPRINTS, INC. (US) 2010-06-03 WO disclosed
US-20100102029-A1 Imprint Lithography Template MOLECULAR IMPRINTS, INC. (US) 2010-04-29 US disclosed