Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAOB | P27338 | 3/20 | 0.42 |
| ▸ | LMNA | P02545 | 3/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.40 |
| ▸ | HDAC3 | O15379 | 2/20 | 0.40 |
| ▸ | HDAC4 | P56524 | 2/20 | 0.40 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.40 |
| ▸ | HDAC2 | Q92769 | 2/20 | 0.40 |
| ▸ | HDAC8 | Q9BY41 | 2/20 | 0.40 |
| ▸ | HDAC6 | Q9UBN7 | 2/20 | 0.40 |
| ▸ | PLIN1 | O60240 | 2/20 | 0.40 |
| ▸ | MAPT | P10636 | 2/20 | 0.40 |
| ▸ | RECQL | P46063 | 2/20 | 0.40 |
| ▸ | PLIN5 | Q00G26 | 2/20 | 0.40 |
| ▸ | ABHD5 | Q8WTS1 | 2/20 | 0.40 |
| ▸ | TNKS | O95271 | 1/20 | 0.40 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.40 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.40 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.40 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.40 |
| ▸ | TNKS2 | Q9H2K2 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| (Z)-1,2-Diphenylethene SCHEMBL8772780 | 0.86 | MAOB (0.50) | MAOBLMNAALDH1A1TRPA1NFE2L2 | |
| SCHEMBL20077 | 0.83 | — | — | |
| SCHEMBL2777416 | 0.83 | — | — | |
| SCHEMBL28759603 | 0.83 | MAOB (0.58) | MAOBLMNAALDH1A1HDAC3HDAC4 | |
| Iodide SCHEMBL31264191 | 0.81 | MAOB (0.55) | MAOBLMNAALDH1A1HDAC3HDAC4 | |
| SCHEMBL29127335 | 0.81 | MAOB (0.55) | MAOBLMNAALDH1A1HDAC3HDAC4 | |
| Water SCHEMBL27501786 | 0.81 | MAOB (0.55) | MAOBLMNAALDH1A1HDAC3HDAC4 | |
| Bromide SCHEMBL5434485 | 0.81 | MAOB (0.55) | MAOBLMNAALDH1A1HDAC3HDAC4 | |
| Ethylene SCHEMBL28182815 | 0.79 | MAOB (0.52) | MAOBLMNAALDH1A1HDAC3HDAC4 | |
| (Z)-1,2-Diphenylethene SCHEMBL16968445 | 0.78 | MAOB (0.58) | MAOBLMNAALDH1A1TRPA1NFE2L2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10018908-B2 | Pattern forming method | TOSHIBA MEMORY CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-20170131630-A1 | PATTERN FORMING METHOD | KABUSHIKI KAISHA TOSHIBA (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9588418-B2 | Pattern forming method | KABUSHIKI KAISHA TOSHIBA (JP) | 2017-03-07 | — | — | US | disclosed |
| US-9550322-B2 | Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method | KABUSHIKI KAISHA TOSHIBA (JP) | 2017-01-24 | — | — | US | disclosed |
| US-20150246478-A1 | NEAR-FIELD EXPOSURE MASK, RESIST PATTERN FORMING METHOD, DEVICE MANUFACTURING METHOD, NEAR-FIELD EXPOSURE METHOD, PATTERN FORMING METHOD, NEAR-FIELD OPTICAL LITHOGRAPHY MEMBER, AND NEAR-FIELD NANOIMPRINT METHOD | KABUSHIKI KAISHA TOSHIBA (JP) | 2015-09-03 | — | — | US | disclosed |
| US-20150168825-A1 | NEAR-FIELD EXPOSURE MASK AND PATTERN FORMING METHOD | KABUSHIKI KAISHA TOSHIBA (JP) | 2015-06-18 | — | — | US | disclosed |
| US-9029047-B2 | Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method | KABUSHIKI KAISHA TOSHIBA (JP) | 2015-05-12 | — | — | US | disclosed |
| US-8945798-B2 | Near-field exposure mask and pattern forming method | KABUSHIKI KAISHA TOSHIBA (JP) | 2015-02-03 | — | — | US | disclosed |
| US-20130260290-A1 | NEAR-FIELD EXPOSURE MASK AND PATTERN FORMING METHOD | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-10-03 | — | — | US | disclosed |
| US-20120228804-A1 | NEAR-FIELD EXPOSURE MASK, RESIST PATTERN FORMING METHOD, DEVICE MANUFACTURING METHOD, NEAR-FIELD EXPOSURE METHOD, PATTERN FORMING METHOD, NEAR-FIELD OPTICAL LITHOGRAPHY MEMBER, AND NEAR-FIELD NANOIMPRINT METHOD | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-09-13 | — | — | US | disclosed |
| US-7659039-B2 | Near-field exposure mask, method of producing that mask, near-field exposure apparatus having that mask, and resist pattern forming method | CANON KABUSHIKI KAISHA (JP) | 2010-02-09 | — | — | US | disclosed |
| US-7605908-B2 | Near-field exposure mask, near-field exposure apparatus, and near-field exposure method | CANON KABUSHIKI KAISHA (JP) | 2009-10-20 | — | — | US | disclosed |
| US-20090208850-A1 | Near-Field Exposure Mask, Method of Producing that Mask, Near-Field Exposure Apparatus Having that Mask, and Resist Pattern Forming Method | CANON KABUSHIKI KAISHA (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20080079926-A1 | NEAR-FIELD EXPOSURE MASK, NEAR-FIELD EXPOSURE APPARATUS, AND NEAR-FIELD EXPOSURE METHOD | CANON KABUSHIKI KAISHA (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20060014108-A1 | Resist pattern forming method based on near-field exposure, and substrate processing method and device manufacturing method using the resist pattern forming method | CANON KABUSHIKI KAISHA (JP) | 2006-01-19 | — | — | US | disclosed |
| US-20060003269-A1 | Resist pattern forming method, substrate processing method, and device manufacturing method | CANON KABUSHIKI KAISHA (JP) | 2006-01-05 | — | — | US | disclosed |