SCHEMBL382158

SCHEMBL382158

O=[Si]=O.[Ta]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL8718700 0.91
SCHEMBL8372385 0.91
SCHEMBL7131063 0.91
SCHEMBL131 0.89
SCHEMBL7648816 0.84
Hydrochloric Acid SCHEMBL9814728 0.80
Hydrochloric Acid SCHEMBL20838459 0.80
SCHEMBL5104038 0.80
SCHEMBL21247124 0.80
Methane SCHEMBL20598813 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12401340-B2 Acoustic wave device with multi-layer piezoelectric substrate with heat dissipation SKYWORKS SOLUTIONS, INC. (US) 2025-08-26 US claimed
US-20240348229-A1 ACOUSTIC WAVE DEVICE WITH MULTI-LAYER PIEZOELECTRIC SUBSTRATE WITH HEAT DISSIPATION SKYWORKS SOLUTIONS INC (US) 2024-10-17 US claimed
CN-114075651-A Tantalum-silicon dioxide sputtering target material and preparation method thereof 宁波江丰电子材料股份有限公司 2022-02-22 CN claimed
CN-211222593-U Heat-sensitive printing head heating substrate with continuous high printing performance 山东华菱电子股份有限公司 2020-08-11 CN claimed
US-12401340-B2 Acoustic wave device with multi-layer piezoelectric substrate with heat dissipation SKYWORKS SOLUTIONS, INC. (US) 2025-08-26 US disclosed
US-20240348229-A1 ACOUSTIC WAVE DEVICE WITH MULTI-LAYER PIEZOELECTRIC SUBSTRATE WITH HEAT DISSIPATION SKYWORKS SOLUTIONS INC (US) 2024-10-17 US disclosed
US-12047053-B2 Surface acoustic wave resonator with multi-layer piezoelectric substrate with heat dissipation SKYWORKS SOLUTIONS, INC. (US) 2024-07-23 US disclosed
CN-115124330-B Preparation method of silicon oxide ceramic target blank 宁波江丰电子材料股份有限公司 2023-09-08 CN disclosed
CN-116621580-A Tantalum silicon oxide target and preparation method thereof 宁波江丰电子材料股份有限公司 2023-08-22 CN disclosed
CN-219446511-U Heating substrate for thermal printhead with uniform printing concentration 山东华菱电子股份有限公司 2023-08-01 CN disclosed
CN-115775721-A Preparation method of laser-induced phase change graphite electrode diamond electronic device 西安交通大学 2023-03-10 CN disclosed
CN-115124330-A Preparation method of silicon oxide ceramic target blank 宁波江丰电子材料股份有限公司 2022-09-30 CN disclosed
US-8102409-B2 Printer device SONY CORPORATION (JP) 2012-01-24 US disclosed
EP-1839887-B1 Printer device SONY CORP (JP) 2011-08-17 EP disclosed
US-7466329-B2 Printer device SONY CORPORATION (JP) 2008-12-16 US disclosed
US-20070229644-A1 Printer device SONY CORPORATION 2007-10-04 US disclosed
US-20070229642-A1 Printer device SONY CORPORATION (JP) 2007-10-04 US disclosed
EP-1839887-A1 Printer device Sony Corporation (JP) 2007-10-03 EP disclosed
US-6348708-B1 Semiconductor device utilizing a rugged tungsten film LG SEMICON CO., LTD. (KR) 2002-02-19 US disclosed
US-5563090-A Method for forming rugged tungsten film and method for fabricating semiconductor device utilizing the same LG SEMICON CO., LTD. (KR) 1996-10-08 US disclosed