SCHEMBL3839243

SCHEMBL3839243

O=C(c1ccc(Oc2cccc(Br)c2)cc1)c1ccccc1Oc1cccc(Br)c1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MCL1 Q07820 4/20 0.47
▸ BCL2 P10415 3/20 0.47
▸ BAD Q92934 1/20 0.47
▸ POLB P06746 2/20 0.47
▸ SRD5A2 P31213 3/20 0.46
▸ CTNNB1 P35222 1/20 0.45
▸ CYP1A2 P05177 1/20 0.44
▸ MAPT P10636 1/20 0.44
▸ CYP2C9 P11712 1/20 0.44
▸ CYP2C19 P33261 1/20 0.44
▸ CASP3 P42574 1/20 0.44
▸ HTT P42858 1/20 0.44
▸ SENP7 Q9BQF6 1/20 0.44
▸ TNKS O95271 1/20 0.43
▸ PARP15 Q460N3 1/20 0.43
▸ PARP14 Q460N5 1/20 0.43
▸ PARP10 Q53GL7 1/20 0.43
▸ TNKS2 Q9H2K2 1/20 0.43
▸ PARP2 Q9UGN5 1/20 0.43
▸ AKR1C3 P42330 2/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7466422 0.92 MAPT (0.49) POLBCTNNB1CYP1A2MAPTCYP2C9
SCHEMBL3842603 0.88 CTNNB1 (0.49) POLBCTNNB1CYP1A2MAPTCYP2C9
SCHEMBL3838678 0.87 AKR1C3 (0.56) MCL1BCL2BADPOLBSRD5A2
SCHEMBL3839222 0.85 SRD5A2 (0.58) POLBSRD5A2CYP1A2MAPTCYP2C9
SCHEMBL10448654 0.85 SRD5A2 (0.62) MCL1BCL2BADPOLBSRD5A2
SCHEMBL3845279 0.83 POLB (0.50) MCL1BCL2BADPOLBSRD5A2
SCHEMBL29575432 0.82 CTNNB1 (0.65) MCL1BCL2BADSRD5A2CTNNB1
SCHEMBL8746846 0.82 CTNNB1 (0.65) MCL1BCL2BADSRD5A2CTNNB1
SCHEMBL3838552 0.81 SRD5A2 (0.53) POLBSRD5A2CYP1A2MAPTCYP2C9
SCHEMBL3840260 0.80 CTNNB1 (0.46) POLBSRD5A2CTNNB1MAPTPARP10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 — — US claimed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 — — US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 — — EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 — — EP disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 — — US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 — — US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 — — EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 — — EP disclosed
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 — — US disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 — — US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 — — US disclosed
EP-1254917-B1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR CORP (JP) 2004-06-30 — — EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 — — US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 — — EP disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 — — US disclosed
EP-1254917-A1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR Corporation (JP) 2002-11-06 — — EP disclosed
US-20020161173-A1 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2002-10-31 — — US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 — — EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 MCL1 323/4885BCL2 334/4885BAD 4171/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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