SCHEMBL3842647

SCHEMBL3842647

CO[SiH2]C(C)(C)Cc1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A2 P23975 1/20 0.48
TAAR1 Q96RJ0 1/20 0.48
LMNA P02545 1/20 0.45
CYP2D6 P10635 1/20 0.45
TRPA1 O75762 1/20 0.40
CYP1A2 P05177 2/20 0.38
CYP2C9 P11712 2/20 0.38
CYP2C19 P33261 2/20 0.38
CYP3A4 P08684 2/20 0.37
RECQL P46063 1/20 0.37
LTA4H P09960 1/20 0.36
TP53 P04637 1/20 0.36
PPARG P37231 1/20 0.36
PPARA Q07869 1/20 0.36
MMP8 P22894 1/20 0.36
MAPK1 P28482 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.35
HIF1A Q16665 1/20 0.35
ALDH1A1 P00352 1/20 0.35
TSHR P16473 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17048963 0.82 SLC6A2 (0.47) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL3836967 0.80 SLC6A2 (0.45) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL5085403 0.79 SLC6A2 (0.44) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL5081737 0.77 SLC6A2 (0.42) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL5077169 0.77 SLC6A2 (0.39) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL2057168 0.76 SLC6A2 (0.41) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL2057701 0.76 SLC6A2 (0.41) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL7640216 0.76 SLC6A2 (0.41) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL5075139 0.76 SLC6A2 (0.38) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL1389317 0.74 SLC6A2 (0.52) SLC6A2TAAR1LMNACYP2D6TRPA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-9448482-B2 Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20150253673-A1 PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-10 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-20040214381-A1 Process for the production of organic transistor and organic transistor PIONEER CORPORATION 2004-10-28 US disclosed
EP-1471586-A1 Process for the production of organic transistor and organic transistor Pioneer Corporation (JP) 2004-10-27 EP disclosed