⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4419446 | 0.87 | — | — | |
| SCHEMBL10802613 | 0.82 | — | — | |
| SCHEMBL10410008 | 0.82 | — | — | |
| SCHEMBL11203222 | 0.82 | — | — | |
| SCHEMBL19346 | 0.82 | — | — | |
| SCHEMBL962562 | 0.67 | — | — | |
| Arsenic SCHEMBL9551940 | 0.67 | — | — | |
| SCHEMBL3054286 | 0.67 | — | — | |
| SCHEMBL4805751 | 0.67 | — | — | |
| SCHEMBL5574388 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-5060030-A | Pseudomorphic HEMT having strained compensation layer | RAYTHEON COMPANY (US) | 1991-10-22 | — | — | US | claimed |
| US-7498612-B2 | Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof | SHOWA DENKO K.K. (JP) | 2009-03-03 | — | — | US | disclosed |
| US-20070131959-A1 | Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof | SHOWA DENKO K.K. (JP) | 2007-06-14 | — | — | US | disclosed |
| WO-2005043635-A1 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING PN-JUNCTION TYPE HETERO STRUCTURE AND FORMING METHOD THEREOF | SHOWA DENKO K.K. (JP) | 2005-05-12 | — | — | WO | disclosed |
| US-6835962-B2 | Stacked layer structure, light-emitting device, lamp, and light source unit | SHOWA DENKO KABUSHIKI KAISHA (JP) | 2004-12-28 | — | — | US | disclosed |
| US-20030027099-A1 | Stacked layer structure, light-emitting device, lamp, and light source unit | SHOWA DENKO K.K. | 2003-02-06 | — | — | US | disclosed |
| US-5668387-A | Relaxed channel high electron mobility transistor | TRW INC. (US) | 1997-09-16 | — | — | US | disclosed |
| US-5060030-A | Pseudomorphic HEMT having strained compensation layer | RAYTHEON COMPANY (US) | 1991-10-22 | — | — | US | disclosed |