⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3927799 | 0.71 | KDM3A (1.00) | — | |
| SCHEMBL29742292 | 0.71 | — | — | |
| SCHEMBL29362740 | 0.71 | — | — | |
| SCHEMBL9297420 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL8845531 | 0.50 | — | — | |
| SCHEMBL5877920 | 0.50 | — | — | |
| Water SCHEMBL2721099 | 0.50 | — | — | |
| SCHEMBL1468246 | 0.50 | — | — | |
| SCHEMBL4817090 | 0.50 | — | — | |
| SCHEMBL9450927 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 718 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114256444-B | Phosphorus-nickel-germanium composite anode material, preparation method and application thereof | 公元股份有限公司 | 2024-11-15 | — | — | CN | claimed |
| EP-3320562-B1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | ENTEGRIS INC (US) | 2024-08-28 | — | — | EP | claimed |
| US-11777016-B2 | Method of forming backside power rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-03 | — | — | US | claimed |
| CN-109841498-B | Semiconductor device and method for manufacturing the same | 爱思开海力士有限公司 | 2023-09-19 | — | — | CN | claimed |
| CN-116031265-B | Photodetector integrated with solar cell and CMOS circuit and manufacturing method | 上海铭锟半导体有限公司 | 2023-09-15 | — | — | CN | claimed |
| CN-116031265-A | Photodetector integrated with solar cell and CMOS circuit and manufacturing method | 上海铭锟半导体有限公司 | 2023-04-28 | — | — | CN | claimed |
| US-20220336641-A1 | Method of Forming Backside Power Rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-20 | — | — | US | claimed |
| CN-114256444-A | Phosphorus-nickel-germanium composite negative electrode material, and preparation method and application thereof | 永高股份有限公司 | 2022-03-29 | — | — | CN | claimed |
| CN-107851660-B | Formulations for selective etching of silicon germanium relative to germanium | 恩特格里斯公司 | 2022-02-01 | — | — | CN | claimed |
| US-11094778-B2 | Capacitor with high work function interface layer | SK Hynix Inc. (KR) | 2021-08-17 | — | — | US | claimed |
| US-7880228-B2 | Semiconductor device including MISFET | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-02-01 | — | — | US | claimed |
| US-20100244154-A1 | SEMICONDUCTOR DEVICE INCLUDING MISFET | KABUSHIKI KAISHA TOSHIBA | 2010-09-30 | — | — | US | claimed |
| US-20100190328-A1 | Self Aligned Silicided Contacts | HAMPP ROLAND | 2010-07-29 | — | — | US | claimed |
| US-20090218640-A1 | Self Aligned Silicided Contacts | INFINEON TECHNOLOGIES AG (DE) | 2009-09-03 | — | — | US | claimed |
| US-20090206370-A1 | METHOD AND APPARATUS FOR FABRICATING A HETEROJUNCTION BIPOLAR TRANSISTOR | GLOBALFOUNDRIES U.S. INC. | 2009-08-20 | — | — | US | claimed |
| US-20090050972-A1 | Strained Semiconductor Device and Method of Making Same | CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. (SG) | 2009-02-26 | — | — | US | claimed |
| US-20070187767-A1 | SEMICONDUCTOR DEVICE INCLUDING MISFET | KABUSHIKI KAISHA TOSHIBA | 2007-08-16 | — | — | US | claimed |
| US-20040178476-A1 | Etching metal using sonication | BRASK JUSTIN K (US) | 2004-09-16 | — | — | US | claimed |
| US-6746967-B2 | Etching metal using sonication | INTEL CORPORATION | 2004-06-08 | — | — | US | claimed |
| US-20040061199-A1 | Etching metal using sonication | INTEL CORPORATION | 2004-04-01 | — | — | US | claimed |