SCHEMBL3948638

SCHEMBL3948638

Cc1ccccc1S(=O)(=O)Oc1ccc(C2(c3ccc(OS(=O)(=O)c4ccccc4C)cc3F)c3ccccc3-c3ccccc32)c(F)c1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 5/20 0.48
MEN1 O00255 3/20 0.48
ESR1 P03372 3/20 0.48
ESR2 Q92731 3/20 0.48
ATM Q13315 1/20 0.48
POLB P06746 2/20 0.43
CYP1A2 P05177 1/20 0.39
CYP2C9 P11712 1/20 0.39
CYP2C19 P33261 1/20 0.39
GAA P10253 1/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
SENP8 Q96LD8 1/20 0.36
SENP7 Q9BQF6 1/20 0.36
SENP6 Q9GZR1 1/20 0.36
TRPV4 Q9HBA0 1/20 0.34
CNR1 P21554 1/20 0.33
CNR2 P34972 1/20 0.33
STS P08842 1/20 0.33
ALDH1A1 P00352 3/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3842450 0.81 POLB (0.51) KMT2AMEN1ESR1ESR2ATM
SCHEMBL3839012 0.79 ESR1 (0.39) KMT2AMEN1ESR1ESR2ATM
SCHEMBL3839077 0.77 ESR1 (0.43) KMT2AMEN1ESR1ESR2ATM
SCHEMBL3844117 0.74 ESR1 (0.44) KMT2AMEN1ESR1ESR2ATM
SCHEMBL3843316 0.72 ESR1 (0.49) KMT2AMEN1ESR1ESR2ATM
SCHEMBL3520421 0.70 MEN1 (0.53) KMT2AMEN1ESR1ESR2ATM
SCHEMBL30829203 0.70 PDK2 (0.43) KMT2AMEN1ESR1ESR2PDK2
SCHEMBL27392619 0.70 PDK2 (0.43) KMT2AMEN1ESR1ESR2PDK2
SCHEMBL3842330 0.69 CYP2C9 (0.43) KMT2AMEN1ESR1ESR2ATM
SCHEMBL11856777 0.69 MEN1 (0.58) KMT2AMEN1ESR1ESR2ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed