SCHEMBL3956232

SCHEMBL3956232

O=C(c1ccc(Br)cc1)c1ccccc1C(=O)c1ccccc1C(=O)c1ccc(Br)cc1

nearest known ligand 0.81

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AKR1C3 P42330 3/20 0.81
CDC25B P30305 2/20 0.53
ATM Q13315 1/20 0.53
MAPT P10636 4/20 0.53
POLB P06746 1/20 0.53
NPC1 O15118 3/20 0.53
MAPK1 P28482 2/20 0.53
HTT P42858 1/20 0.53
KMT2A Q03164 3/20 0.53
HPGD P15428 1/20 0.53
CES2 O00748 1/20 0.52
CES1 P23141 1/20 0.52
LMNA P02545 3/20 0.52
NR4A1 P22736 1/20 0.52
ABCB11 O95342 1/20 0.51
PTGS1 P23219 1/20 0.51
ADORA1 P30542 1/20 0.51
PTGS2 P35354 1/20 0.51
RAB9A P51151 3/20 0.50
GSTA1 P08263 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3843558 0.95 AKR1C3 (0.81) AKR1C3CDC25BATMMAPTPOLB
SCHEMBL1828088 0.90 AKR1C3 (1.00) AKR1C3CDC25BATMMAPTPOLB
SCHEMBL7849291 0.88 AKR1C3 (0.70) AKR1C3CDC25BATMMAPTPOLB
SCHEMBL9712432 0.88 AKR1C3 (0.70) AKR1C3CDC25BATMMAPTPOLB
SCHEMBL3677894 0.87 AKR1C3 (0.69) AKR1C3CDC25BATMMAPTPOLB
SCHEMBL27540437 0.85 LIG1 (0.71) AKR1C3MAPTPOLBNPC1MAPK1
SCHEMBL3842158 0.84 AKR1C3 (0.60) AKR1C3CDC25BATMMAPTKMT2A
SCHEMBL29379008 0.84 MAPT (0.71) AKR1C3MAPTPOLBNPC1MAPK1
SCHEMBL5754387 0.84 AKR1C3 (0.65) AKR1C3MAPTPOLBNPC1MAPK1
SCHEMBL29875241 0.84 AKR1C3 (0.65) AKR1C3MAPTPOLBNPC1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US claimed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
EP-1254917-B1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR CORP (JP) 2004-06-30 EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
EP-1254917-A1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR Corporation (JP) 2002-11-06 EP disclosed
US-20020161173-A1 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2002-10-31 US disclosed