SCHEMBL3966427

SCHEMBL3966427

CC(C)(C)[AsH]C(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6283637 0.71
SCHEMBL8845758 0.59
SCHEMBL649540 0.58
SCHEMBL3426362 0.53
SCHEMBL8358538 0.53 TSHR (0.43)
SCHEMBL2151842 0.53 TSHR (0.43)
SCHEMBL1913 0.53
SCHEMBL7925914 0.50
SCHEMBL11632388 0.47
Water SCHEMBL11756523 0.47

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250259884-A1 HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLATION REGION GLOBALWAFERS CO., LTD. (TW) 2025-08-14 US disclosed
US-12300535-B2 High resistivity silicon-on-insulator substrate comprising an isolation region GLOBALWAFERS CO., LTD. (TW) 2025-05-13 US disclosed
US-20230163022-A1 HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLATION REGION GLOBALWAFERS CO., LTD. (TW) 2023-05-25 US disclosed
US-11587825-B2 Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate GLOBALWAFERS CO., LTD. (TW) 2023-02-21 US disclosed
US-11380576-B2 Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate GLOBALWAFERS CO., LTD. (TW) 2022-07-05 US disclosed
US-20210035855-A1 METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H) (SG) 2021-02-04 US disclosed
US-20210013091-A1 METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H) (SG) 2021-01-14 US disclosed
US-10825718-B2 Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate GLOBALWAFERS CO., LTD. (TW) 2020-11-03 US disclosed
US-10475695-B2 High resistivity silicon-on-insulator substrate comprising an isolation region GLOBALWAFERS CO., LTD. (TW) 2019-11-12 US disclosed
US-20190214294-A1 METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE GLOBALWAFERS CO., LTD. (TW) 2019-07-11 US disclosed
EP-0560029-B1 Process for making alkyl arsine compounds CYTEC TECH CORP (US) 1998-07-01 EP disclosed
US-5415129-A Bronsted acid catalyst CYTEC TECHNOLOGY CORP. (US) 1995-05-16 US disclosed
EP-0324958-B1 Process for making alkyl arsine compounds AMERICAN CYANAMID CO (US) 1994-09-21 EP disclosed
US-5274149-A Continuous process by contacting an olefin, arsine and a Bronsted acid catalyst; vapor phase AMERICAN CYANAMID COMPANY (US) 1993-12-28 US disclosed
EP-0560029-A1 Process for making alkyl arsine compounds CYTEC TECHNOLOGY CORP. (US) 1993-09-15 EP disclosed
US-5003092-A Use of R2 MR' to prepare semiconductor and ceramic precursors THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NY (US) 1991-03-26 US disclosed
US-5003093-A Process for making alkyl arsine compounds AMERICAN CYANAMID 1991-03-26 US disclosed
US-4857655-A Process for making alkyl arsine compounds AMERICAN CYANAMID COMPANY (US) 1989-08-15 US disclosed
EP-0324958-A2 Process for making alkyl arsine compounds CYTEC TECHNOLOGY CORP. (US) 1989-07-26 EP disclosed
US-4721683-A LIQUID PHASE AMERICAN CYANAMID COMPANY (US) 1988-01-26 US disclosed