⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3420713 | 0.82 | — | — | |
| Fluoride Ion SCHEMBL365244 | 0.82 | — | — | |
| SCHEMBL4649793 | 0.82 | — | — | |
| SCHEMBL23462230 | 0.71 | — | — | |
| SCHEMBL23462082 | 0.71 | — | — | |
| SCHEMBL23462232 | 0.71 | — | — | |
| SCHEMBL23462133 | 0.71 | — | — | |
| SCHEMBL23462224 | 0.71 | — | — | |
| SCHEMBL23462187 | 0.71 | — | — | |
| SCHEMBL23462231 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7544827-B2 | Process for depositing low dielectric constant materials | ASM JAPAN K.K. (JP) | 2009-06-09 | — | — | US | disclosed |
| US-20070032676-A1 | Process for depositing low dielectric constant materials | TODD MICHAEL A | 2007-02-08 | — | — | US | disclosed |
| US-7144620-B2 | Process for depositing low dielectric constant materials | ASM JAPAN K.K. (JP) | 2006-12-05 | — | — | US | disclosed |
| US-20040161617-A1 | Process for depositing low dielectric constant materials | ASM JAPAN K.K. (JP) | 2004-08-19 | — | — | US | disclosed |
| US-6733830-B2 | VAPOR DEPOSITED FILM | ASM JAPAN K.K. (JP) | 2004-05-11 | — | — | US | disclosed |
| US-20010055672-A1 | Low dielectric constant materials and processes | ASM JAPAN K.K. (JP) | 2001-12-27 | — | — | US | disclosed |
| EP-1123991-A2 | Low dielectric constant materials and processes | ASM JAPAN K.K. (JP) | 2001-08-16 | — | — | EP | disclosed |
| US-4777023-A | Preparation of silicon and germanium hydrides containing two different group 4A atoms | SOLAREX CORPORATION (US) | 1988-10-11 | — | — | US | disclosed |