SCHEMBL4019313

SCHEMBL4019313

O=[Si]([O-])[O-].[O-2].[Ti+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5050759 0.94
SCHEMBL8508996 0.94
Lithium Ion SCHEMBL15466460 0.94
SCHEMBL42403 0.94
SCHEMBL8936989 0.88
SCHEMBL1367984 0.88
SCHEMBL16469634 0.88
SCHEMBL1369955 0.88
SCHEMBL18007253 0.88
SCHEMBL916133 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230415377-A1 APPARATUS FOR PREPARATION OF SINTERED CERAMIC BODY OF LARGE DIMENSION HERAEUS COVANTICS NORTH AMERICA LLC 2023-12-28 US claimed
EP-4221950-A2 SINTERED CERAMIC BODY OF LARGE DIMENSION AND METHOD OF MAKING Heraeus Conamic North America LLC (US) 2023-08-09 EP claimed
EP-4221949-A1 APPARATUS FOR PREPARATION OF SINTERED CERAMIC BODY OF LARGE DIMENSION Heraeus Conamic North America LLC (US) 2023-08-09 EP claimed
CN-115291470-A EUV class substrate, EUV mask base plate, EUV mask plate and manufacturing method thereof 上海传芯半导体有限公司 2022-11-04 CN claimed
WO-2022072705-A2 SINTERED CERAMIC BODY OF LARGE DIMENSION AND METHOD OF MAKING HERAEUS CONAMIC NORTH AMERICA LLC (US) 2022-04-07 WO claimed
US-8592330-B2 Veneer ceramic for dental restorations and method for veneering dental restorations IVOCLAR VIVADENT AG (LI) 2013-11-26 US claimed
US-6943398-B2 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-13 US claimed
US-6891231-B2 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-05-10 US claimed
US-20040094791-A1 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-05-20 US claimed
EP-1420451-A2 Semiconductor non-volatile memory device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-05-19 EP claimed
WO-2026100165-A1 ELECTRICAL CIRCUIT CONNECTION, CONDUCTIVE SHEET, ELECTROSTATIC CHUCK, AND HEATER 株式会社巴川コーポレーション 2026-05-15 WO disclosed
US-20260108941-A1 POWDERED MATERIAL FOR ADDITIVE MANUFACTURING AND METHOD OF PRODUCING SAID POWDERED MATERIAL FUJIMI INCORPORATED (JP) 2026-04-23 US disclosed
EP-4708332-A1 ELECTRIC WIRE/CABLE COATING MATERIAL, ELECTRIC WIRE/CABLE, VACUUM DEVICE FOR SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING ELECTRIC WIRE/CABLE COATING MATERIAL DAIKIN INDUSTRIES, LTD. (JP) 2026-03-11 EP disclosed
US-12521789-B2 Additive manufacturing powders with improved physical characteristics, method of manufacture and use thereof TEKNA PLASMA SYSTEMS INC. (CA) 2026-01-13 US disclosed
US-12447533-B2 Powder material for use in additive layer manufacturing, additive layer manufacturing method using same, and molded article FUJIMI INCORPORATED (JP) 2025-10-21 US disclosed
US-7288456-B2 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-10-30 US disclosed
US-20050239251-A1 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-10-27 US disclosed
US-6943398-B2 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-13 US disclosed
US-20040094791-A1 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-05-20 US disclosed
EP-1420451-A2 Semiconductor non-volatile memory device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-05-19 EP disclosed