⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride SCHEMBL1950963 | 1.00 | — | — | |
| Fluoride SCHEMBL258160 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL8351761 | 0.82 | — | — | |
| Fluoride SCHEMBL4810356 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL8343635 | 0.82 | — | — | |
| Fluoride SCHEMBL9295668 | 0.82 | — | — | |
| Fluoride SCHEMBL9318976 | 0.71 | — | — | |
| Fluoride SCHEMBL49263 | 0.71 | — | — | |
| F-18 SCHEMBL117749 | 0.71 | — | — | |
| Fluoride SCHEMBL7924055 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 705 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260107547-A1 | HIGH SENSITIVITY ETCHING WITH GERMANIUM-CONTAINING GASES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-16 | — | — | US | claimed |
| US-20260093060-A1 | MIRROR LAYER AND MIRROR FOR A LITHOGRAPHIC APPARATUS | ASML NETHERLANDS B.V. (NL) | 2026-04-02 | — | — | US | claimed |
| US-20260094790-A1 | SUBSTRATE PROCESSING APPARATUS | SAMSUNG ELECTRONICS CO LTD (KR) | 2026-04-02 | — | — | US | claimed |
| US-12520558-B2 | High selectivity etching with germanium-containing gases | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 2026-01-06 | — | — | US | claimed |
| US-12513952-B2 | Method for fabricating a semiconductor device including etching nanostructures | Taiwan Semiconducor Manufacturing Company, Ltd. (TW) | 2025-12-30 | — | — | US | claimed |
| EP-4602436-A1 | MIRROR LAYER AND MIRROR FOR A LITHOGRAPHIC APPARATUS | ASML Netherlands B.V. (NL) | 2025-08-20 | — | — | EP | claimed |
| EP-4561307-A1 | PEROVSKITE SOLAR CELL WITH LOCAL SEMI-OPEN PASSIVATION CONTACT STRUCTURE AND PREPARATION METHOD THEREFOR | University of Science and Technology of China (CN) | 2025-05-28 | — | — | EP | claimed |
| US-20250169269-A1 | PEROVSKITE SOLAR CELLS WITH LOCAL SEMI-OPENING PASSIVATION CONTACT STRUCTURE AND PREPARATION METHOD THEREOF | UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (CN) | 2025-05-22 | — | — | US | claimed |
| CN-119923599-A | Mirror layer and mirror for lithographic apparatus | ASML荷兰有限公司 | 2025-05-02 | — | — | CN | claimed |
| CN-119490199-A | IWV molecular sieve containing metal heteroatom and preparation method and application thereof | 山西师范大学 | 2025-02-21 | — | — | CN | claimed |
| US-6755151-B2 | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets | THE UNIVERSITY OF TOLEDO | 2004-06-29 | — | — | US | claimed |
| US-20040106269-A1 | NOVEL HOT-FILAMENT CHEMICAL VAPOR DEPOSITION CHAMBER AND PROCESS WITH MULTIPLE GAS INLETS | UNITED STATES DEPARTMENT OF ENERGY | 2004-06-03 | — | — | US | claimed |
| US-6638839-B2 | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets | THE UNIVERSITY OF TOLEDO | 2003-10-28 | — | — | US | claimed |
| US-20030032265-A1 | Novel hot-filament chemical vapor deposition chamber and process with multiple gas inlets | THE UNIVERSITY OF TOLEDO (US) | 2003-02-13 | — | — | US | claimed |
| US-20010049457-A1 | Method of fluorinating a halogenated organic substance | STEPHENS MATTHEW D (US) | 2001-12-06 | — | — | US | claimed |
| US-6103600-A | Method for forming ultrafine particles and/or ultrafine wire, and semiconductor device using ultrafine particles and/or ultrafine wire formed by the forming method | SHARP KABUSHIKI KAISHA (JP) | 2000-08-15 | — | — | US | claimed |
| US-5371307-A | A calcined zeolite is formed by mixing the source of silicon dioxide and germanium dioxide, heating to crystallization and roasting at high temperature | RHONE-POULENC CHIMIE (FR) | 1994-12-06 | — | — | US | claimed |
| EP-0368651-B1 | Epitaxial growth process and growing apparatus | FUJITSU LTD (JP) | 1994-09-07 | — | — | EP | claimed |
| US-5232868-A | Method for forming a thin semiconductor film | AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 1993-08-03 | — | — | US | claimed |
| EP-0368651-A2 | Epitaxial growth process and growing apparatus | FUJITSU LIMITED (JP) | 1990-05-16 | — | — | EP | claimed |