⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1801382 | 0.82 | — | — | |
| SCHEMBL31476260 | 0.82 | — | — | |
| SCHEMBL7740811 | 0.82 | — | — | |
| SCHEMBL941301 | 0.82 | — | — | |
| SCHEMBL272655 | 0.82 | — | — | |
| SCHEMBL5170883 | 0.67 | — | — | |
| SCHEMBL1547889 | 0.67 | — | — | |
| SCHEMBL7477749 | 0.67 | — | — | |
| SCHEMBL4457673 | 0.67 | — | — | |
| Water SCHEMBL9650065 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7534891-B2 | Quinoline derivatives as H3R inverse agonists | HOFFMAN-LA ROCHE INC. (US) | 2009-05-19 | — | — | US | disclosed |
| US-7498179-B2 | Semiconductor device having ferroelectric material capacitor and method of making the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-03 | — | — | US | disclosed |
| US-20060084679-A1 | Quinoline derivatives as H3R inverse agonists | HOFFMANN-LA ROCHE INC. | 2006-04-20 | — | — | US | disclosed |
| US-20060003473-A1 | Semiconductor device having ferroelectric material capacitor and method of making the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-01-05 | — | — | US | disclosed |
| US-6956279-B2 | Semiconductor device having multi-layer oxygen barrier pattern | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-10-18 | — | — | US | disclosed |
| US-20020036307-A1 | Semiconductor device having ferroelectric material capacitor and method of making the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-03-28 | — | — | US | disclosed |