SCHEMBL406637

SCHEMBL406637

[Bi].[Si].[Ti]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL406635 1.00
SCHEMBL1298132 0.82
SCHEMBL3436784 0.82
SCHEMBL28050280 0.82
SCHEMBL3133483 0.82
SCHEMBL3436786 0.82
SCHEMBL7947535 0.82
SCHEMBL94969 0.82
SCHEMBL94968 0.82
SCHEMBL3133493 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102282291-B Raw material for chemical vapor deposition, and process for forming silicon-containing thin film using same ADEKA CORP 2013-08-21 CN disclosed
CN-101848917-B Metal compound, chemical vapor deposition material containing the same, and method for producing metal-containing thin film ADEKA CORP 2013-02-27 CN disclosed
US-8357815-B2 Metal compound, material for chemical vapor phase growth, and process for forming metal-containing thin film ADEKA CORPORATION (JP) 2013-01-22 US disclosed
EP-2233491-B1 METAL COMPOUND, CHEMICAL VAPOR DEPOSITION MATERIAL CONTAINING THE SAME, AND METHOD FOR PRODUCING METAL-CONTAINING THIN FILM ADEKA CORP (JP) 2012-07-11 EP disclosed
US-20120021127-A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND PROCESS FOR FORMING SILICON-CONTAINING THIN FILM USING SAME ADEKA CORPORATION (JP) 2012-01-26 US disclosed
EP-2407576-A1 PROCESS FOR REMOVING RESIDUAL WATER MOLECULES IN PROCESS FOR PRODUCING METALLIC THIN FILM, AND PURGE SOLVENT Adeka Corporation (JP) 2012-01-18 EP disclosed
CN-102282291-A Raw material for chemical vapor deposition, and process for forming silicon-containing thin film using same 2011-12-14 CN disclosed
CN-102272349-A Process for removing residual water molecules in process for producing metallic thin film, and purge solvent 2011-12-07 CN disclosed
US-20110268887-A1 PROCESS FOR REMOVING RESIDUAL WATER MOLECULES IN METALLIC-THIN-FILM PRODUCTION METHOD AND PURGE SOLVENT ADEKA CORPORATION (JP) 2011-11-03 US disclosed
US-20100247765-A1 METAL COMPOUND, MATERIAL FOR CHEMICAL VAPOR PHASE GROWTH, AND PROCESS FOR FORMING METAL-CONTAINING THIN FILM ADEKA CORPORATION (JP) 2010-09-30 US disclosed
EP-2233491-A1 METAL COMPOUND, CHEMICAL VAPOR DEPOSITION MATERIAL CONTAINING THE SAME, AND METHOD FOR PRODUCING METAL-CONTAINING THIN FILM Adeka Corporation (JP) 2010-09-29 EP disclosed
CN-101848917-A Metal compound, chemical vapor deposition material containing the same, and method for producing metal-containing thin film ADEKA CORP 2010-09-29 CN disclosed
US-7714155-B2 Alkoxide compound, material for thin film formation, and process for thin film formation ADEKA CORPORATION (JP) 2010-05-11 US disclosed
US-20090035464-A1 Alkoxide compound, material for thin film formation, and process for thin film formation ADEKA CORPORATION (JP) 2009-02-05 US disclosed
CN-1914150-A Metal alkoxide compound, thin film-forming material, and method for producing thin film ASAHI DENKA CO LTD (JP) 2007-02-14 CN disclosed