SCHEMBL409707

SCHEMBL409707

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nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL29042649 0.82
SCHEMBL31489983 0.82
SCHEMBL28228930 0.82
SCHEMBL6546051 0.82
SCHEMBL10608619 0.71
SCHEMBL1560648 0.71
SCHEMBL5946331 0.71
SCHEMBL7172477 0.71
SCHEMBL3164744 0.71
SCHEMBL31436214 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12102019-B2 Data storage structure for improving memory cell reliability TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-09-24 US claimed
CN-118156588-A Preparation method of hafnium and cerium doped polyethylene oxide solid electrolyte membrane 福建师范大学 2024-06-07 CN claimed
US-20230345847-A1 DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-10-26 US claimed
US-8519447-B2 Ion sensitive sensor with multilayer construction in the sensor region Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG (DE) 2013-08-27 US claimed
US-8461587-B2 Ion-sensitive sensor with multilayer construction in the sensitive region Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG (DE) 2013-06-11 US claimed
US-20120139011-A1 ION SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSOR REGION Endress +Hauser Conducta Gesellschaft fur Mess-und Regeltechnik mbH + Co. KG (DE) 2012-06-07 US claimed
US-20120018722-A1 ION-SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSITIVE REGION ENDRESS + HAUSER CONDUCTA GESELLSCHAFT FUR MESS- UND REGELTECHNIK MBH + CO. KG (DE) 2012-01-26 US claimed
CN-112436087-B Memory cell, memory device, and method for forming memory device 台湾积体电路制造股份有限公司 2025-03-14 CN disclosed
US-12102019-B2 Data storage structure for improving memory cell reliability TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-09-24 US disclosed
US-20230345847-A1 DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-10-26 US disclosed
US-11716913-B2 Data storage structure for improving memory cell reliability TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-08-01 US disclosed
US-20220238802-A1 DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2022-07-28 US disclosed
US-11309491-B2 Data storage structure for improving memory cell reliability TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2022-04-19 US disclosed
WO-2006104805-A2 DURABLE CATALYST FOR PROCESSING CARBONACEOUS FUEL, AND THE METHOD OF MAKING UTC POWER CORPORATION (US) 2006-10-05 WO disclosed
US-20030235526-A1 Ceria-based mixed-metal oxide structure, including method of making and use HYAXIOM, INC. 2003-12-25 US disclosed
WO-2003082740-A1 CERIA-BASED MIXED-METAL OXIDE STRUCTURE INCLUDING METHOD OF MAKING AND USE UTC FUEL CELLS, LLC (US) 2003-10-09 WO disclosed
WO-2003082741-A1 CERIA-BASED MIXED-METAL OXIDE STRUCTURE, INCLUDING METHOD OF MAKING AND USE UTC FUEL CELLS, LLC (US) 2003-10-09 WO disclosed
US-20030186805-A1 Ceria-based mixed-metal oxide structure, including method of making and use UTC FUEL CELLS, LLC 2003-10-02 US disclosed
EP-0848077-B1 Thermal barrier coating systems and materials UNITED TECHNOLOGIES CORP (US) 2003-03-12 EP disclosed
WO-2001076735-A1 PROCESS FOR PREPARING FISCHER-TROPSCH CATALYST PHILLIPS PETROLEUM COMPANY (US) 2001-10-18 WO disclosed