SCHEMBL411433

SCHEMBL411433

CCC([SiH3])(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15534110 0.76
SCHEMBL5971199 0.70
SCHEMBL1105076 0.70
SCHEMBL2269884 0.68
SCHEMBL9326896 0.67
SCHEMBL4887580 0.67
SCHEMBL8050120 0.67
SCHEMBL6873278 0.67
SCHEMBL7711907 0.67
SCHEMBL23295165 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115895294-B Composite nano transparent iron oxide yellow and preparation method thereof 云浮鸿志新材料有限公司 2023-10-03 CN claimed
CN-115895294-A Composite nano transparent iron oxide yellow and preparation method thereof 云浮鸿志新材料有限公司 2023-04-04 CN claimed
CN-115684383-A Method for detecting content of triethylmethylsilane in trimethylaluminum 江苏南大光电材料股份有限公司 2023-02-03 CN claimed
US-20080265381-A1 SiCOH DIELECTRIC INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-10-30 US claimed
US-20070173071-A1 SiCOH dielectric INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-07-26 US claimed
US-20030064154-A1 Low-K dielectric thin films and chemical vapor deposition method of making same ADVANCED TECHNOLOGY MATERIALS, INC. 2003-04-03 US claimed
WO-2003015129-A2 LOW-K DIELECTRIC THIN FILMS AND CHEMICAL VAPOR DEPOSITION METHOD OF MAKING SAME ADVANCED TECHNOLOGY MATERIAL, INC. (US) 2003-02-20 WO claimed
US-20020172766-A1 Low dielectric constant thin films and chemical vapor deposition method of making same ADVANCED TECHNOLOGY MATERIALS, INC. 2002-11-21 US claimed
US-12403437-B2 Method for producing nanodiamonds doped with group 14 element, and method for purifying same DAICEL CORPORATION (JP) 2025-09-02 US disclosed
US-12351463-B2 Heteroatom-doped nanodiamond DAICEL CORPORATION (JP) 2025-07-08 US disclosed
CN-119086179-B Sampling detection device based on trimethylaluminum preparation and application method thereof 安徽博泰电子材料有限公司 2025-02-28 CN disclosed
US-20250002355-A1 HETEROATOM-DOPED NANODIAMOND PARTICLES AND METHOD FOR PRODUCING HETEROATOM-DOPED NANODIAMOND PARTICLES DAICEL CORPORATION (JP) 2025-01-02 US disclosed
CN-119086179-A Sampling detection device based on trimethylaluminum preparation and application method thereof 安徽博泰电子材料有限公司 2024-12-06 CN disclosed
WO-2024219059-A1 NV CENTER-CONTAINING NANODIAMOND PARTICLE AND METHOD FOR PRODUCING SAME 株式会社ダイセル 2024-10-24 WO disclosed
WO-1999066009-A2 FUEL COMPOSITIONS EMPLOYING CATALYST COMBUSTION STRUCTURE ORR WILLIAM C (US) 1999-12-23 WO disclosed
EP-0954558-A1 FUEL COMPOSITIONS EXHIBITING IMPROVED FUEL STABILITY ORR, William C. (US) 1999-11-10 EP disclosed
EP-0922706-A2 Tertiary alkylsilane NIPPON OIL CO. LTD. (JP) 1999-06-16 EP disclosed
WO-1998026028-A1 FUEL COMPOSITIONS EXHIBITING IMPROVED FUEL STABILITY ORR WILLIAM C (US) 1998-06-18 WO disclosed
US-4853251-A REACTING IN SPACE HOUSING SUBSTRATE A HALOGEN-CARBON COMPOUND AND HYDROGEN OR A HALOGEN CANON KABUSHIKI KAISHA (JP) 1989-08-01 US disclosed
US-4818563-A FORMING ACTIVATED SPECIES SEPARATELY, FEEDING INTO CHAMBER WITH SUBSTRATE, HEATING CANON KABUSHIKI KAISHA (JP) 1989-04-04 US disclosed