⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride SCHEMBL3782629 | 1.00 | — | — | |
| Fluoride SCHEMBL27633743 | 1.00 | — | — | |
| Fluoride SCHEMBL28177971 | 1.00 | — | — | |
| Fluoride SCHEMBL27561565 | 1.00 | — | — | |
| Fluoride SCHEMBL24757 | 0.87 | — | — | |
| Fluoride SCHEMBL64471 | 0.87 | — | — | |
| Fluoride SCHEMBL7103696 | 0.87 | — | — | |
| Fluoride SCHEMBL9458583 | 0.87 | — | — | |
| Fluoride SCHEMBL7103694 | 0.87 | — | — | |
| Fluoride SCHEMBL1061207 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20090217940-A1 | REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SILICON/SILICON DIOXIDE USING DENSE FLUID/CHEMICAL FORMULATIONS | ADVANCED TECHNOLOGY MARTERIALS, INC. (US) | 2009-09-03 | — | — | US | claimed |
| EP-1572833-B1 | SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATION FOR ASHED AND UNASHED ALUMINUM POST-ETCH RESIDUE REMOVAL | ADVANCED TECH MATERIALS (US) | 2008-08-20 | — | — | EP | claimed |
| EP-1937794-A2 | REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SILICON/SILICON DIOXIDE USING DENSE FLUID/CHEMICAL FORMULATIONS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-07-02 | — | — | EP | claimed |
| US-7223352-B2 | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-05-29 | — | — | US | claimed |
| EP-1559132-A4 | REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SLILICON/SILICON DIOXIDE USING SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATIONS | ADVANCED TECH MATERIALS (US) | 2007-04-11 | — | — | EP | claimed |
| WO-2007033008-A2 | REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SILICON/SILICON DIOXIDE USING DENSE FLUID/CHEMICAL FORMULATIONS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-03-22 | — | — | WO | claimed |
| US-20060073998-A1 | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal | KORZENSKI MICHAEL B | 2006-04-06 | — | — | US | claimed |
| EP-1572833-A4 | SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATION FOR ASHED AND UNASHED ALUMINUM POST-ETCH RESIDUE REMOVAL | ADVANCED TECH MATERIALS (US) | 2006-03-15 | — | — | EP | claimed |
| US-20060040840-A1 | Supercritical carbon dioxide/chemical formulation for removal of photoresists | KORZENSKI MICHAEL B | 2006-02-23 | — | — | US | claimed |
| US-20060019850-A1 | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations | ADVANCED TECHNOLOGY MATERIALS, INC. | 2006-01-26 | — | — | US | claimed |
| EP-1592520-A2 | SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATION FOR REMOVAL OF PHOTORESISTS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2005-11-09 | — | — | EP | claimed |
| EP-1572833-A1 | SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATION FOR ASHED AND UNASHED ALUMINUM POST-ETCH RESIDUE REMOVAL | Advanced Technology Materials, Inc. (US) | 2005-09-14 | — | — | EP | claimed |
| US-6943139-B2 | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2005-09-13 | — | — | US | claimed |
| EP-1559132-A2 | REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SLILICON/SILICON DIOXIDE USING SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATIONS | Advanced Technology Materials, Inc. (US) | 2005-08-03 | — | — | EP | claimed |
| WO-2004042794-A2 | REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SLILICON/SILICON DIOXIDE USING SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATIONS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2004-05-21 | — | — | WO | claimed |
| WO-2004042472-A2 | SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATION FOR REMOVAL OF PHOTORESISTS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2004-05-21 | — | — | WO | claimed |
| WO-2004041965-A1 | SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATION FOR ASHED AND UNASHED ALUMINUM POST-ETCH RESIDUE REMOVAL | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2004-05-21 | — | — | WO | claimed |
| US-20040087457-A1 | Supercritical carbon dioxide/chemical formulation for removal of photoresists | ADVANCED TECHNOLOGY MATERIALS, INC. | 2004-05-06 | — | — | US | claimed |
| US-20040087456-A1 | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations | ADVANCED TECHNOLOGY MATERIALS, INC. | 2004-05-06 | — | — | US | claimed |
| US-20040087174-A1 | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal | ADVANCED TECHNOLOGY MATERIALS, INC. | 2004-05-06 | — | — | US | claimed |