⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL41742 | 1.00 | — | — | |
| SCHEMBL10531769 | 0.87 | — | — | |
| SCHEMBL2502589 | 0.87 | — | — | |
| SCHEMBL30553894 | 0.87 | — | — | |
| Zinc Ion SCHEMBL447654 | 0.87 | — | — | |
| SCHEMBL4890345 | 0.87 | — | — | |
| SCHEMBL350384 | 0.87 | — | — | |
| SCHEMBL2993256 | 0.87 | — | — | |
| Lithium Ion SCHEMBL2865851 | 0.87 | — | — | |
| SCHEMBL29383267 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1153 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260110931-A1 | OPTICALLY ADDRESSABLE LIGHT VALVES | L LIVERMORE NAT SECURITY LLC (US) | 2026-04-23 | — | — | US | claimed |
| US-12513922-B2 | β-Ga2O3 junction barrier Schottky (JBS) diodes with sputtered p-type NiO | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 2025-12-30 | — | — | US | claimed |
| US-12435415-B2 | Thermal atomic layer deposition of ternary gallium oxide thin films | ILLINOIS INSTITUTE OF TECHNOLOGY (US) | 2025-10-07 | — | — | US | claimed |
| US-20250253067-A1 | SEMICONDUCTOR BETAVOLTAIC BATTERY WITH INTEGRATED BETA EMITTER | THE CURATORS OF THE UNIVERSITY OF MISSOURI | 2025-08-07 | — | — | US | claimed |
| US-20250244267-A1 | SURFACE TEMPERATURE ASSESMENT OF ULTRAWIDE BANDGAP MATERIALS USING VISIBLE WAVELENGTH THERMOREFLECTANCE THERMAL IMAGING (TTI) | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 2025-07-31 | — | — | US | claimed |
| US-20250220948-A1 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2025-07-03 | — | — | US | claimed |
| CN-120138595-A | P-type IIIA group metal oxide semiconductor film and preparation method thereof | 香港科技大学(广州) | 2025-06-13 | — | — | CN | claimed |
| US-20250176318-A1 | LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE | XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. (CN) | 2025-05-29 | — | — | US | claimed |
| CN-118073412-B | Double-gate control low-on-resistance heterojunction field effect transistor and manufacturing method thereof | 湖北九峰山实验室 | 2025-04-04 | — | — | CN | claimed |
| US-20240410849-A1 | MANUFACTURING MEHTOD AND STRUCTURE OF MICRO HEATING AND SENSING DEVICE | GUO GUANG JE (TW) | 2024-12-12 | — | — | US | claimed |
| EP-2752869-A1 | SEMICONDUCTOR DEVICE OR CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE OR CRYSTAL | Roca K.K. (JP) | 2014-07-09 | — | — | EP | claimed |
| US-20130119402-A1 | LIGHT EMITTING DEVICE | LG INNOTEK CO., LTD. (KR) | 2013-05-16 | — | — | US | claimed |
| US-20120001170-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2012-01-05 | — | — | US | claimed |
| US-20120001179-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2012-01-05 | — | — | US | claimed |
| WO-2012002292-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2012-01-05 | — | — | WO | claimed |
| WO-2011158703-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2011-12-22 | — | — | WO | claimed |
| US-8008680-B2 | Light-emitting diode device and manufacturing method thereof | EPISTAR CORPORATION (TW) | 2011-08-30 | — | — | US | claimed |
| US-20110006701-A1 | LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF | YU KUO-HUI | 2011-01-13 | — | — | US | claimed |
| US-7821026-B2 | Light emitting diode device and manufacturing method therof | EPISTAR CORPORATION (TW) | 2010-10-26 | — | — | US | claimed |
| US-20090065794-A1 | Light emitting diode device and manufacturing method therof | EPISTAR CORPORATION (TW) | 2009-03-12 | — | — | US | claimed |