⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29350445 | 1.00 | — | — | |
| SCHEMBL4199518 | 1.00 | — | — | |
| Calcium SCHEMBL31142513 | 0.82 | — | — | |
| SCHEMBL31213324 | 0.82 | — | — | |
| SCHEMBL29462485 | 0.82 | — | — | |
| SCHEMBL31621323 | 0.82 | — | — | |
| SCHEMBL31173774 | 0.82 | — | — | |
| SCHEMBL4840310 | 0.82 | — | — | |
| SCHEMBL6932414 | 0.82 | — | — | |
| SCHEMBL29685252 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118317683-B | Colossal magneto-resistance sensor, preparation method thereof and current sensor | 南方电网数字电网研究院股份有限公司 | 2024-10-25 | — | — | CN | claimed |
| CN-118317683-A | Colossal magneto-resistance sensor, preparation method thereof and current sensor | 南方电网数字电网研究院股份有限公司 | 2024-07-09 | — | — | CN | claimed |
| US-7598593-B2 | N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode | SHOWA DENKO K.K. (JP) | 2009-10-06 | — | — | US | claimed |
| US-20070108453-A1 | N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode | SHOWA DENKO K.K. (JP) | 2007-05-17 | — | — | US | claimed |
| WO-2005008757-A1 | n-TYPE OHMIC ELECTRODE FOR n-TYPE GROUP III NITRIDE SEMICONDUCTOR, SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH THE ELECTRODE, AND METHOD FOR FORMING n-TYPE OHMIC ELECTRODE | SHOWA DENKO K.K. (JP) | 2005-01-27 | — | — | WO | claimed |
| CN-116440961-B | La and Al modified Co/TiO2Catalyst, preparation method and application thereof in preparation of low-carbon alcohol from synthesis gas | 珠海谦信新材料有限公司 | 2024-12-03 | — | — | CN | disclosed |
| CN-116803949-B | Sodium niobate-based antiferroelectric ceramic material, preparation method thereof and capacitor | 清华大学 | 2024-05-28 | — | — | CN | disclosed |
| CN-112744785-B | Chemical chain coupling process for co-producing synthesis gas and hydrogen by in-situ utilization of carbon dioxide | 西北大学 | 2023-11-10 | — | — | CN | disclosed |
| CN-115465876-B | Treatment method of fluorine-containing aluminum electrolyte waste | 中国铝业股份有限公司 | 2023-10-20 | — | — | CN | disclosed |
| CN-116803949-A | Sodium niobate-based antiferroelectric ceramic material, preparation method thereof and capacitor | 清华大学 | 2023-09-26 | — | — | CN | disclosed |
| CN-116440961-A | La and Al modified Co/TiO 2 Catalyst, preparation method and application thereof in preparation of low-carbon alcohol from synthesis gas | 珠海谦信新材料有限公司 | 2023-07-18 | — | — | CN | disclosed |
| CN-116113476-A | Venting device, system comprising such a venting device and use of such a venting device | 巴斯美德公司 | 2023-05-12 | — | — | CN | disclosed |
| CN-113842918-B | High-activity anti-sintering methane steam reforming catalyst and preparation method and application thereof | 大连理工大学 | 2023-03-24 | — | — | CN | disclosed |
| CN-115465876-A | Method for treating fluorine-containing aluminum electrolyte waste | 中国铝业股份有限公司 | 2022-12-13 | — | — | CN | disclosed |
| US-7598593-B2 | N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode | SHOWA DENKO K.K. (JP) | 2009-10-06 | — | — | US | disclosed |
| US-20070108453-A1 | N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode | SHOWA DENKO K.K. (JP) | 2007-05-17 | — | — | US | disclosed |
| WO-2005008757-A1 | n-TYPE OHMIC ELECTRODE FOR n-TYPE GROUP III NITRIDE SEMICONDUCTOR, SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH THE ELECTRODE, AND METHOD FOR FORMING n-TYPE OHMIC ELECTRODE | SHOWA DENKO K.K. (JP) | 2005-01-27 | — | — | WO | disclosed |