⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29437235 | 0.82 | — | — | |
| SCHEMBL29936269 | 0.82 | — | — | |
| SCHEMBL31128605 | 0.82 | — | — | |
| SCHEMBL11051052 | 0.82 | — | — | |
| SCHEMBL2044170 | 0.82 | — | — | |
| Magnesium SCHEMBL31746093 | 0.82 | — | — | |
| SCHEMBL5070045 | 0.82 | — | — | |
| SCHEMBL5407677 | 0.82 | — | — | |
| SCHEMBL31339113 | 0.82 | — | — | |
| SCHEMBL30608380 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 274 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250357201-A1 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | WINBOND ELECTRONICS CORP. (TW) | 2025-11-20 | — | — | US | claimed |
| US-12245423-B2 | Semiconductor device with conductive cap layer over conductive plug and method for preparinging the same | NANYA TECHNOLOGY CORPORATION (TW) | 2025-03-04 | — | — | US | claimed |
| CN-119464984-A | Preparation method of heterostructure copper-germanium alloy | 昆明理工大学 | 2025-02-18 | — | — | CN | claimed |
| CN-119411202-A | Standard modularized oversized cathode roller and manufacturing method | 西安泰金新能科技股份有限公司 | 2025-02-11 | — | — | CN | claimed |
| CN-119411042-A | Method for simultaneously improving strength and plasticity of copper alloy | 昆明理工大学 | 2025-02-11 | — | — | CN | claimed |
| CN-119237988-A | High-wear-resistance copper-based active brazing filler metal for superhard abrasive particles, preparation method and brazing method | 河南机电职业学院 | 2025-01-03 | — | — | CN | claimed |
| CN-114571130-B | Preparation method of welding material for welding copper and nonmetallic substrate and welding lug | 祥博传热科技股份有限公司 | 2024-07-09 | — | — | CN | claimed |
| CN-115786764-B | Copper mirror material and preparation method thereof | 广州番禺职业技术学院 | 2023-12-22 | — | — | CN | claimed |
| CN-115747562-B | Ornament copper alloy and preparation method thereof | 广州番禺职业技术学院 | 2023-12-15 | — | — | CN | claimed |
| US-20230403847-A1 | SEMICONDUCTOR DEVICE WITH CONDUCTIVE CAP LAYER OVER CONDUCTIVE PLUG AND METHOD FOR PREPARINGING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2023-12-14 | — | — | US | claimed |
| CN-102064154-B | Integrated circuit structure | TAIWAN SEMICONDUCTOR MFG | 2012-10-03 | — | — | CN | claimed |
| CN-102534293-A | High strength superfine crystalloid copper-germanium alloy and preparation method thereof | UNIV KUNMING SCIENCE & TECHNOLOGY | 2012-07-04 | — | — | CN | claimed |
| CN-102064154-A | Integrated circuit structure | TAIWAN SEMICONDUCTOR MFG | 2011-05-18 | — | — | CN | claimed |
| US-20110003474-A1 | Germanium-Containing Dielectric Barrier for Low-K Process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2011-01-06 | — | — | US | claimed |
| US-20030018271-A1 | Simplified and lightweight system for enhanced visualization of subcutaneous hemoglobin-containing structures | KIMBLE ALLAN WAYNE (US) | 2003-01-23 | — | — | US | claimed |
| US-6339029-B1 | Method to form copper interconnects | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2002-01-15 | — | — | US | claimed |
| US-6255734-B1 | Passivated copper line semiconductor device structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2001-07-03 | — | — | US | claimed |
| US-6143657-A | SELECTIVELY GROWING COPPER GERMANIDE COMPOUND AS DEPOSIT ON BOTTOM OF CONTACT HOLE, FORMING BARRIER LAYER OVER COPPER GERMANIDE, FORMING COPPER PLUG THEREOVER | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2000-11-07 | — | — | US | claimed |
| US-6130162-A | Method of preparing passivated copper line and device manufactured thereby | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2000-10-10 | — | — | US | claimed |
| US-6046108-A | Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2000-04-04 | — | — | US | claimed |