⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10453808 | 0.84 | EPHX1 (0.60) | — | |
| SCHEMBL4204005 | 0.84 | — | — | |
| SCHEMBL2487403 | 0.82 | — | — | |
| SCHEMBL4202328 | 0.76 | — | — | |
| SCHEMBL11627899 | 0.74 | — | — | |
| SCHEMBL14087178 | 0.74 | — | — | |
| SCHEMBL18553312 | 0.74 | — | — | |
| SCHEMBL18375852 | 0.74 | — | — | |
| SCHEMBL14186720 | 0.74 | — | — | |
| SCHEMBL3143753 | 0.74 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9543147-B2 | Photoresist and method of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2017-01-10 | — | — | US | disclosed |
| US-9502231-B2 | Photoresist layer and method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-11-22 | — | — | US | disclosed |
| US-9460909-B2 | Method for manufacturing semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-10-04 | — | — | US | disclosed |
| US-9436086-B2 | Anti-reflective layer and method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-09-06 | — | — | US | disclosed |
| US-20160155632-A1 | Anti-Reflective Layer and Method | TAIWAN SEMICONDUCTOR MFG (TW) | 2016-06-02 | — | — | US | disclosed |
| US-20160155626-A1 | Method for Manufacturing Semiconductor Device | TAIWAN SEMICONDUCTOR MFG (TW) | 2016-06-02 | — | — | US | disclosed |
| US-9256128-B2 | Method for manufacturing semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-02-09 | — | — | US | disclosed |
| US-9245751-B2 | Anti-reflective layer and method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-01-26 | — | — | US | disclosed |
| US-20160013041-A1 | Photoresist Layer and Method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-01-14 | — | — | US | disclosed |
| US-20160005595-A1 | Photoresist and Method of Manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-01-07 | — | — | US | disclosed |
| US-20150111384-A1 | Anti-Reflective Layer and Method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2015-04-23 | — | — | US | disclosed |
| US-20140273457-A1 | Anti-Reflective Layer and Method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-09-18 | — | — | US | disclosed |
| US-8481247-B2 | Resist underlayer film forming composition containing liquid additive | NISSAN CHEMICAL INDUSTRIES, LTD. | 2013-07-09 | — | — | US | disclosed |
| US-20090311624-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LIQUID ADDITIVE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2009-12-17 | — | — | US | disclosed |