SCHEMBL4201007

SCHEMBL4201007

CCCC1(C(N)=O)CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8695240 0.91 CETP (0.41)
SCHEMBL1768013 0.91 CETP (0.37)
SCHEMBL517348 0.89 CETP (0.43)
Hydrochloric Acid SCHEMBL28065415 0.87 CETP (0.42)
SCHEMBL12273347 0.86 CETP (0.36)
SCHEMBL17447481 0.85 KDM4E (0.31)
SCHEMBL21565394 0.85 KDM4E (0.46)
SCHEMBL613082 0.84 CYP4F2 (0.38)
SCHEMBL17447478 0.83 CETP (0.34)
SCHEMBL5031163 0.82 CYP4F2 (0.41)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4651867-A1 BETA 2-ADRENERGIC RECEPTOR AGONISTS FOR TREATMENT OR PREVENTION OF MUSCLE WASTING Atrogi AB (SE) 2025-11-26 EP disclosed
WO-2024153813-A1 BETA 2-ADRENERGIC RECEPTOR AGONISTS FOR TREATMENT OR PREVENTION OF MUSCLE WASTING ATROGI AB (SE) 2024-07-25 WO disclosed
US-9543147-B2 Photoresist and method of manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-01-10 US disclosed
US-9502231-B2 Photoresist layer and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-11-22 US disclosed
US-9460909-B2 Method for manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-10-04 US disclosed
US-9436086-B2 Anti-reflective layer and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-09-06 US disclosed
US-20160155626-A1 Method for Manufacturing Semiconductor Device TAIWAN SEMICONDUCTOR MFG (TW) 2016-06-02 US disclosed
US-20160155632-A1 Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MFG (TW) 2016-06-02 US disclosed
US-9256128-B2 Method for manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-02-09 US disclosed
US-9245751-B2 Anti-reflective layer and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-01-26 US disclosed
US-20160013041-A1 Photoresist Layer and Method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-01-14 US disclosed
US-20160005595-A1 Photoresist and Method of Manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-01-07 US disclosed
US-20150111384-A1 Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2015-04-23 US disclosed
US-20140273457-A1 Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2014-09-18 US disclosed
US-8481247-B2 Resist underlayer film forming composition containing liquid additive NISSAN CHEMICAL INDUSTRIES, LTD. 2013-07-09 US disclosed
US-20090311624-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LIQUID ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-17 US disclosed
US-5661185-A AN ALKOXYPHENYL-ALKYLUREA COMPOUND TREATING SLEEP DISORDER BRISTOL-MYERS SQUIBB CO. (US) 1997-08-26 US disclosed