⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL941747 | 1.00 | — | — | |
| SCHEMBL8134021 | 0.82 | — | — | |
| Methane SCHEMBL28186056 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL7876704 | 0.82 | — | — | |
| SCHEMBL11302056 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL29212738 | 0.82 | — | — | |
| SCHEMBL11704421 | 0.82 | — | — | |
| SCHEMBL1199 | 0.71 | — | — | |
| SCHEMBL29493905 | 0.71 | — | — | |
| SCHEMBL9806122 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6326297-B1 | Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer | NOVELLUS SYSTEMS, INC. | 2001-12-04 | — | — | US | claimed |
| US-5328867-A | Peroxide clean before buried contact polysilicon deposition | UNITED MICROELECTRONICS CORPORATION (TW) | 1994-07-12 | — | — | US | claimed |
| JP-4293256-A | — | — | None | — | — | JP | disclosed |
| US-9590056-B2 | Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers | GLOBALFOUNDRIES INC. (KY) | 2017-03-07 | — | — | US | disclosed |
| US-20160099321-A1 | SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION LAYERS FORMED ON SIDEWALLS OF CONTACT ETCH STOP LAYERS | GLOBALFOUNDRIES U.S. INC. | 2016-04-07 | — | — | US | disclosed |
| US-9269809-B2 | Methods for forming protection layers on sidewalls of contact etch stop layers | GLOBALFOUNDRIES INC. (KY) | 2016-02-23 | — | — | US | disclosed |
| US-20140264641-A1 | SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION LAYERS FORMED ON SIDEWALLS OF CONTACT ETCH STOP LAYERS | GLOBALFOUNDRIES INC. (KY) | 2014-09-18 | — | — | US | disclosed |
| US-8492269-B2 | Hybrid contact structure with low aspect ratio contacts in a semiconductor device | GLOBALFOUNDRIES INC. (KY) | 2013-07-23 | — | — | US | disclosed |
| US-8390127-B2 | Contact trenches for enhancing stress transfer in closely spaced transistors | ADVANCED MICRO DEVICES, INC. (US) | 2013-03-05 | — | — | US | disclosed |
| US-8368221-B2 | Hybrid contact structure with low aspect ratio contacts in a semiconductor device | ADVANCED MICRO DEVICES, INC. (US) | 2013-02-05 | — | — | US | disclosed |
| US-20120181692-A1 | HYBRID CONTACT STRUCTURE WITH LOW ASPECT RATIO CONTACTS IN A SEMICONDUCTOR DEVICE | GLOBALFOUNDRIES INC. (DE) | 2012-07-19 | — | — | US | disclosed |
| US-7442638-B2 | Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layer | ADVANCED MICRO DEVICES, INC. (US) | 2008-10-28 | — | — | US | disclosed |
| US-20070096221-A1 | SEMICONDUCTOR DEVICE COMPRISING COPPER-BASED CONTACT PLUG AND A METHOD OF FORMING THE SAME | ADVANCED MICRO DEVICES, INC. | 2007-05-03 | — | — | US | disclosed |
| US-20070099414-A1 | SEMICONDUCTOR DEVICE COMPRISING A CONTACT STRUCTURE BASED ON COPPER AND TUNGSTEN | GLOBALFOUNDRIES U.S. INC. | 2007-05-03 | — | — | US | disclosed |
| US-20070077749-A1 | METHOD FOR FORMING A TUNGSTEN INTERCONNECT STRUCTURE WITH ENHANCED SIDEWALL COVERAGE OF THE BARRIER LAYER | ADVANCED MICRO DEVICES, INC. | 2007-04-05 | — | — | US | disclosed |
| US-6326297-B1 | Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer | NOVELLUS SYSTEMS, INC. | 2001-12-04 | — | — | US | disclosed |
| US-6326297-B1 | Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer | NOVELLUS SYSTEMS, INC. | 2001-12-04 | — | — | US | disclosed |
| US-6284650-B1 | Integrated tungsten-silicide processes | APPLIED MATERIALS, INC. | 2001-09-04 | — | — | US | disclosed |
| EP-0785574-A2 | Method of forming tungsten-silicide | APPLIED MATERIALS, INC. (US) | 1997-07-23 | — | — | EP | disclosed |
| JP-H04293256-A | MANUFACTURE OF SEMICONDUCTOR DEVICE | NIPPONDENSO CO LTD | 1992-10-16 | — | — | JP | disclosed |