⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL293355 | 0.70 | — | — | |
| SCHEMBL4275878 | 0.70 | — | — | |
| SCHEMBL584300 | 0.70 | — | — | |
| SCHEMBL8362725 | 0.70 | — | — | |
| N,N-Dimethylethanaminium SCHEMBL352062 | 0.67 | — | — | |
| N,N-Dimethylethanaminium SCHEMBL16338 | 0.67 | — | — | |
| N,N-Dimethylethanaminium SCHEMBL2146567 | 0.67 | TSHR (0.36) | — | |
| Water SCHEMBL28212767 | 0.67 | — | — | |
| Hydrochloric Acid SCHEMBL4015648 | 0.67 | — | — | |
| Hydrochloric Acid SCHEMBL27485306 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 143 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120076350-A | Zirconium lanthanum oxide film antiferroelectric capacitor with nonvolatile memory performance and implementation method thereof | 华东师范大学 | 2025-05-30 | — | — | CN | claimed |
| CN-120035376-A | Hafnium oxide-based ferroelectric capacitor and manufacturing method thereof | 中国科学院微电子研究所 | 2025-05-23 | — | — | CN | claimed |
| CN-119569575-A | Preparation method and deposition method of IVB-group metal organic precursor | 中船(邯郸)派瑞特种气体股份有限公司 | 2025-03-07 | — | — | CN | claimed |
| CN-119562530-A | Flexible multi-value hafnium oxide-based ferroelectric capacitor and preparation method and application thereof | 中国人民解放军国防科技大学 | 2025-03-04 | — | — | CN | claimed |
| CN-118891394-A | Deposition of ceramic layers using liquid organometallic precursors | 埃克斯能量有限责任公司 | 2024-11-01 | — | — | CN | claimed |
| CN-118064978-A | Method for preparing ZrN (100) single-orientation zirconium nitride film by using Si (111) substrate MOCVD | 中国科学院半导体研究所 | 2024-05-24 | — | — | CN | claimed |
| CN-117810254-A | Semiconductor structure and forming method thereof | 中国科学院微电子研究所 | 2024-04-02 | — | — | CN | claimed |
| CN-116845056-B | High-performance hafnium oxide-based ferroelectric capacitor and preparation method thereof | 上海交通大学 | 2024-02-27 | — | — | CN | claimed |
| CN-117276801-A | Ionic liquid-resistant cellulose/inorganic ceramic diaphragm and preparation method and application thereof | 西安铝电科技发展有限公司 | 2023-12-22 | — | — | CN | claimed |
| CN-116845056-A | High-performance hafnium oxide-based ferroelectric capacitor and preparation method thereof | 上海交通大学 | 2023-10-03 | — | — | CN | claimed |
| CN-114414641-A | Platinum-rhodium composite electrode for nitrogen-oxygen sensor chip and preparation method thereof | 深圳市富济新材料科技有限公司 | 2022-04-29 | — | — | CN | claimed |
| CN-114057209-A | Zirconium-containing heteroatom molecular sieve, preparation method and application thereof | 中国石油化工股份有限公司 | 2022-02-18 | — | — | CN | claimed |
| CN-113999257-A | Preparation method of semiconductor grade tetra (methylethylamino) zirconium | 江苏南大光电材料股份有限公司 | 2022-02-01 | — | — | CN | claimed |
| CN-112985330-A | Preparation method of wafer-level film thickness standard sheet for online instrument calibration | 西安交通大学 | 2021-06-18 | — | — | CN | claimed |
| CN-112313775-A | Tunability of dopant concentration in thin hafnium oxide films | 应用材料公司 | 2021-02-02 | — | — | CN | claimed |
| CN-110407577-A | Ceramic membrane material, catalysis electrode and its preparation method and application | HUIZHOU MINUSGM ELECTRONIC MAT CO LTD | 2019-11-05 | — | — | CN | claimed |
| CN-107210219-A | The formation composition of the film containing zirconium for the film containing zirconium that is vapor-deposited | 乔治洛德方法研究和开发液化空气有限公司 | 2017-09-26 | — | — | CN | claimed |
| US-20160049505-A1 | SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-02-18 | — | — | US | claimed |
| CN-104185602-A | Container for handling and for transporting high and ultra-high purity chemicals | EVONIK DEGUSSA GMBH | 2014-12-03 | — | — | CN | claimed |
| US-20070026608-A1 | FLASH MEMORY DEVICES HAVING MULTILAYERED INTER-GATE DIELECTRIC LAYERS INCLUDING METAL OXIDE LAYERS AND METHODS OF MANUFACTURING THE SAME | SAMSUNG ELECTONICS CO., LTD. | 2007-02-01 | — | — | US | claimed |