SCHEMBL4235708

SCHEMBL4235708

[Gd].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4235706 1.00
SCHEMBL7554448 1.00
SCHEMBL30694090 0.82
Water SCHEMBL21599105 0.82
SCHEMBL29147990 0.82
SCHEMBL28378179 0.82
SCHEMBL31447971 0.82
SCHEMBL4192651 0.82
Fluoride SCHEMBL21715125 0.82
SCHEMBL565615 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110391300-B Schottky field effect transistor and manufacturing method thereof 上海华力集成电路制造有限公司 2023-06-09 CN claimed
CN-110391300-A Schottky field-effect tube and its manufacturing method 上海华力集成电路制造有限公司 2019-10-29 CN claimed
CN-110227157-A Mix gadolinium silicon nano/photosensitizer self assembly metal organic frame nano material preparation method 南开大学 2019-09-13 CN claimed
CN-1216406-C Magnetic p-n junction thin film material and mfg. method thereof INST SEMICONDUCTORS CAS (CN) 2005-08-24 CN claimed
CN-1452216-A Magnetic p-n junction thin film material and mfg. method thereof INST SEMICONDUCTORS CAS (CN) 2003-10-29 CN claimed
CN-110391300-B Schottky field effect transistor and manufacturing method thereof 上海华力集成电路制造有限公司 2023-06-09 CN disclosed
CN-115533020-A Modified gadolinium oxide material and preparation method and application thereof 中国航发北京航空材料研究院 2022-12-30 CN disclosed
CN-110391300-A Schottky field-effect tube and its manufacturing method 上海华力集成电路制造有限公司 2019-10-29 CN disclosed
CN-110227157-A Mix gadolinium silicon nano/photosensitizer self assembly metal organic frame nano material preparation method 南开大学 2019-09-13 CN disclosed
CN-110227157-A Mix gadolinium silicon nano/photosensitizer self assembly metal organic frame nano material preparation method 南开大学 2019-09-13 CN disclosed
CN-110227157-A Mix gadolinium silicon nano/photosensitizer self assembly metal organic frame nano material preparation method 南开大学 2019-09-13 CN disclosed
CN-105641696-B A kind of gold gadolinium composite nano materials, preparation method and its usage 国家纳米科学中心 2019-07-16 CN disclosed
US-20130195766-A1 ULTRAFINE NANOPARTICLES COMPRISING A FUNCTIONALIZED POLYORGANOSILOXANE MATRIX AND INCLUDING METAL COMPLEXES; METHOD FOR OBTAINING SAME AND USES THEREOF IN MEDICAL IMAGING AND/OR THERAPY NANOH (FR) 2013-08-01 US disclosed
US-20090258073-A1 MAGNETIC CARRIER AND MEDICAL PREPARATION FOR CONTROLLABLE DELIVERY AND RELEASE OF ACTIVE SUBSTANCES, METHODS OF THEIR PRODUCTION AND METHODS OF TREATMENT USING THEREOF TISHIN, ALEKSANDR METTALINOVICH (RU) 2009-10-15 US disclosed
WO-2008044963-A2 MAGNETIC CARRIER AND MEDICAL PREPARATION FOR CONTROLLABLE DELIVERY AND RELEASE OF ACTIVE SUBSTANCES, A METHOD OF PRODUCTION AND METHOD OF TREATMENT USING THEREOF TISHIN ALEKSANDR METTALINOVICH (RU) 2008-04-17 WO disclosed
CN-1769181-A Single-phase gadolinium silicide and its preparation method INST OF SEMICONDUCTORS CAS (CN) 2006-05-10 CN disclosed
CN-1769181-A Single-phase gadolinium silicide and its preparation method INST OF SEMICONDUCTORS CAS (CN) 2006-05-10 CN disclosed
CN-1216406-C Magnetic p-n junction thin film material and mfg. method thereof INST SEMICONDUCTORS CAS (CN) 2005-08-24 CN disclosed
CN-1452216-A Magnetic p-n junction thin film material and mfg. method thereof INST SEMICONDUCTORS CAS (CN) 2003-10-29 CN disclosed
EP-0966354-B1 LITHOGRAPHIC PRINTING PLATES WITH A SOL-GEL LAYER KODAK POLYCHROME GRAPHICS LLC (US) 2002-05-29 EP disclosed