⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9750913 | 0.71 | — | — | |
| SCHEMBL714797 | 0.70 | — | — | |
| SCHEMBL7923511 | 0.70 | — | — | |
| SCHEMBL10390244 | 0.68 | — | — | |
| SCHEMBL9224200 | 0.68 | — | — | |
| SCHEMBL8374668 | 0.68 | — | — | |
| SCHEMBL10390027 | 0.68 | — | — | |
| Hydrochloric Acid SCHEMBL7918834 | 0.68 | — | — | |
| SCHEMBL2426984 | 0.68 | — | — | |
| SCHEMBL10390106 | 0.68 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20070012907-A1 | Doped Semiconductor Nanocrystal Layers And Preparation Thereof | GROUP IV SEMICONDUCTOR INC. | 2007-01-18 | — | — | US | claimed |
| EP-1588423-A2 | RARE EARTH DOPED GROUP IV NANOCRYSTAL LAYERS | Group IV Semiconductor Inc. (CA) | 2005-10-26 | — | — | EP | claimed |
| US-20040214362-A1 | Doped semiconductor nanocrystal layers and preparation thereof | MCMASTER UNIVERSITY (CA) | 2004-10-28 | — | — | US | claimed |
| US-20040149353-A1 | Doped semiconductor powder and preparation thereof | KIRSTEEN MGMT. GROUP LLC | 2004-08-05 | — | — | US | claimed |
| WO-2004066345-A2 | DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARATION THEREOF | GROUP IV SEMICONDUCTOR INC. (CA) | 2004-08-05 | — | — | WO | claimed |
| WO-2004066346-A2 | RARE EARTH DOPED GROUP IV NANOCRYSTAL LAYERS | GROUP IV SEMICONDUCTOR INC. (CA) | 2004-08-05 | — | — | WO | claimed |
| CN-1117389-C | Semiconductor layer mixed with chemical vapor deposited rare-earth | IBM (US) | 2003-08-06 | — | — | CN | claimed |
| CN-1255735-A | Semiconductor layer mixed with chemical vapor deposited rare-earth | IBM (US) | 2000-06-07 | — | — | CN | claimed |
| EP-0586321-B1 | Formation of supersaturated rare earth doped semiconductor layers by CVD | IBM (US) | 1998-05-20 | — | — | EP | claimed |
| US-5322813-A | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-06-21 | — | — | US | claimed |
| EP-0586321-A2 | Supersaturated rare earth doped semiconductor layers by CVD | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-03-09 | — | — | EP | claimed |
| CN-119920681-A | Method, apparatus and structure for forming rare earth-containing layers | ASM IP私人控股有限公司 | 2025-05-02 | — | — | CN | disclosed |
| US-20250137127-A1 | METHOD FOR FORMING A RARE-EARTH-CONTAINING LAYER, APPARATUS, AND STRUCTURE | ASM IP HOLDING B.V. (NL) | 2025-05-01 | — | — | US | disclosed |
| US-20160300921-A1 | SEMICONDUCTOR ELEMENT, METHOD FOR FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | KOREA ADVANCED INSTUTE OF SCIENCE AND TECHNOLOGY (KR) | 2016-10-13 | — | — | US | disclosed |
| US-9450064-B1 | Semiconductor element, method for fabricating the same, and semiconductor device including the same | SK Hynix Inc. (KR) | 2016-09-20 | — | — | US | disclosed |
| EP-0586321-B1 | Formation of supersaturated rare earth doped semiconductor layers by CVD | IBM (US) | 1998-05-20 | — | — | EP | disclosed |
| US-5646425-A | Supersaturated rare earth doped semiconductor layers by chemical vapor deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1997-07-08 | — | — | US | disclosed |
| US-5534079-A | Supersaturated rare earth doped semiconductor layers formed by chemical vapor deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1996-07-09 | — | — | US | disclosed |
| US-5322813-A | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-06-21 | — | — | US | disclosed |
| EP-0586321-A2 | Supersaturated rare earth doped semiconductor layers by CVD | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-03-09 | — | — | EP | disclosed |